Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor

Seung Jae Lee, Jongjin Jung, Ja Young Park, Hye Mi Jang, Yong Rok Kim, Joung Kyu Park

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

Original languageEnglish
Pages (from-to)108-111
Number of pages4
JournalMaterials Letters
Volume111
DOIs
Publication statusPublished - 2013 Sep 16

Fingerprint

Phosphors
phosphors
Light emitting diodes
light emitting diodes
Solid state reactions
Photoluminescence
chips
Color
solid state
photoluminescence
color
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Seung Jae ; Jung, Jongjin ; Park, Ja Young ; Jang, Hye Mi ; Kim, Yong Rok ; Park, Joung Kyu. / Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor. In: Materials Letters. 2013 ; Vol. 111. pp. 108-111.
@article{5ab8b259355b41da915fea6399c60bc9,
title = "Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor",
abstract = "Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.",
author = "Lee, {Seung Jae} and Jongjin Jung and Park, {Ja Young} and Jang, {Hye Mi} and Kim, {Yong Rok} and Park, {Joung Kyu}",
year = "2013",
month = "9",
day = "16",
doi = "10.1016/j.matlet.2013.08.098",
language = "English",
volume = "111",
pages = "108--111",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor. / Lee, Seung Jae; Jung, Jongjin; Park, Ja Young; Jang, Hye Mi; Kim, Yong Rok; Park, Joung Kyu.

In: Materials Letters, Vol. 111, 16.09.2013, p. 108-111.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor

AU - Lee, Seung Jae

AU - Jung, Jongjin

AU - Park, Ja Young

AU - Jang, Hye Mi

AU - Kim, Yong Rok

AU - Park, Joung Kyu

PY - 2013/9/16

Y1 - 2013/9/16

N2 - Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

AB - Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

UR - http://www.scopus.com/inward/record.url?scp=84883693172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883693172&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2013.08.098

DO - 10.1016/j.matlet.2013.08.098

M3 - Article

AN - SCOPUS:84883693172

VL - 111

SP - 108

EP - 111

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -