Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4

Sang Bae Jung, Sung Woo Park, Jun Kyu Yang, Hyung-Ho Park, Haecheon Kim

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

Si3N4 film was adopted as a barrier layer for SiO2 aerogel/GaAs system. Si3N4/GaAs formed an almost chemically sharp interface and nearly maintained their chemical inertness during in-situ heating until 400 °C under ultra high vacuum condition. One micrometer thick SiO2 aerogel film was prepared on the Si3N4/GaAs system using supercritical drying procedure at 250 °C and under 1160 psi. The thickness of Si 3N4 barrier layer was varied as 400, 600 and 900 Å. The dielectric constant of all SiO2 aerogel/Si3N 4/GaAs system was measured as approximately 1.9 and almost no difference was observed from the changes in the thickness of Si 3N4 barrier layer. The leakage current densities were measured as low as under 2×10-7 A/cm2 and these values are two orders smaller than that of SiO2 aerogel/GaAs system prepared without the introduction of Si3N4 barrier layer. All the aerogel/Si3N4/GaAs systems show ohmic conduction at low applying field and space charge limited conduction at high applying field. Furthermore, a reduced leakage current behavior was observed with increased Si3N4 layer thickness and could be explained from the electric-field depression effect due to accumulated charges in the films.

Original languageEnglish
Pages (from-to)580-585
Number of pages6
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Aerogels
aerogels
interlayers
barrier layers
Leakage currents
leakage
Electric field effects
conduction
Ultrahigh vacuum
Electric space charge
drying
ultrahigh vacuum
micrometers
space charge
Drying
Permittivity
Current density
gallium arsenide
silicon nitride
permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Jung, Sang Bae ; Park, Sung Woo ; Yang, Jun Kyu ; Park, Hyung-Ho ; Kim, Haecheon. / Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 580-585.
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abstract = "Si3N4 film was adopted as a barrier layer for SiO2 aerogel/GaAs system. Si3N4/GaAs formed an almost chemically sharp interface and nearly maintained their chemical inertness during in-situ heating until 400 °C under ultra high vacuum condition. One micrometer thick SiO2 aerogel film was prepared on the Si3N4/GaAs system using supercritical drying procedure at 250 °C and under 1160 psi. The thickness of Si 3N4 barrier layer was varied as 400, 600 and 900 {\AA}. The dielectric constant of all SiO2 aerogel/Si3N 4/GaAs system was measured as approximately 1.9 and almost no difference was observed from the changes in the thickness of Si 3N4 barrier layer. The leakage current densities were measured as low as under 2×10-7 A/cm2 and these values are two orders smaller than that of SiO2 aerogel/GaAs system prepared without the introduction of Si3N4 barrier layer. All the aerogel/Si3N4/GaAs systems show ohmic conduction at low applying field and space charge limited conduction at high applying field. Furthermore, a reduced leakage current behavior was observed with increased Si3N4 layer thickness and could be explained from the electric-field depression effect due to accumulated charges in the films.",
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Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4. / Jung, Sang Bae; Park, Sung Woo; Yang, Jun Kyu; Park, Hyung-Ho; Kim, Haecheon.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 580-585.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4

AU - Jung, Sang Bae

AU - Park, Sung Woo

AU - Yang, Jun Kyu

AU - Park, Hyung-Ho

AU - Kim, Haecheon

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N2 - Si3N4 film was adopted as a barrier layer for SiO2 aerogel/GaAs system. Si3N4/GaAs formed an almost chemically sharp interface and nearly maintained their chemical inertness during in-situ heating until 400 °C under ultra high vacuum condition. One micrometer thick SiO2 aerogel film was prepared on the Si3N4/GaAs system using supercritical drying procedure at 250 °C and under 1160 psi. The thickness of Si 3N4 barrier layer was varied as 400, 600 and 900 Å. The dielectric constant of all SiO2 aerogel/Si3N 4/GaAs system was measured as approximately 1.9 and almost no difference was observed from the changes in the thickness of Si 3N4 barrier layer. The leakage current densities were measured as low as under 2×10-7 A/cm2 and these values are two orders smaller than that of SiO2 aerogel/GaAs system prepared without the introduction of Si3N4 barrier layer. All the aerogel/Si3N4/GaAs systems show ohmic conduction at low applying field and space charge limited conduction at high applying field. Furthermore, a reduced leakage current behavior was observed with increased Si3N4 layer thickness and could be explained from the electric-field depression effect due to accumulated charges in the films.

AB - Si3N4 film was adopted as a barrier layer for SiO2 aerogel/GaAs system. Si3N4/GaAs formed an almost chemically sharp interface and nearly maintained their chemical inertness during in-situ heating until 400 °C under ultra high vacuum condition. One micrometer thick SiO2 aerogel film was prepared on the Si3N4/GaAs system using supercritical drying procedure at 250 °C and under 1160 psi. The thickness of Si 3N4 barrier layer was varied as 400, 600 and 900 Å. The dielectric constant of all SiO2 aerogel/Si3N 4/GaAs system was measured as approximately 1.9 and almost no difference was observed from the changes in the thickness of Si 3N4 barrier layer. The leakage current densities were measured as low as under 2×10-7 A/cm2 and these values are two orders smaller than that of SiO2 aerogel/GaAs system prepared without the introduction of Si3N4 barrier layer. All the aerogel/Si3N4/GaAs systems show ohmic conduction at low applying field and space charge limited conduction at high applying field. Furthermore, a reduced leakage current behavior was observed with increased Si3N4 layer thickness and could be explained from the electric-field depression effect due to accumulated charges in the films.

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