Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics

Moon Ho Jo, Jung Kyun Hong, Hyung Ho Park, Joong Jung Kim, Sang Hoon Hyun, Se Young Choi

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

SiO2 aerogel film was characterized from its structural and chemical viewpoints. High porosity of material was measured and compared to thermally grown SiO2 film by Rutherford backscattering spectrometer (RBS). Porous film nature was re-evaluated as enhanced etch rate with high density CHF3-plasma. Detailed observation of microstructure revealed that constituent particles of which the size is in the diameter range of 10-30 nm are cross-linked to build up the skeletal network. Large interior surface coverage, such as alkoxyl group and hydroxyl group were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO2 aerogel after annealing at 450°C were interrelated with the thermal evolution of these surface species, where surface alkoxyl plays the dominant role over surface hydroxyl. Furthermore, good gap-filling and planarization ability on 0.8 μm line and space trench as other requirements for intermetal dielectric application was demonstrated.

Original languageEnglish
Pages (from-to)490-494
Number of pages5
JournalThin Solid Films
Volume308-309
Issue number1-4
DOIs
Publication statusPublished - 1997 Oct 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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