Application of the flip-chip bonding technique to the 10 Gbps laser diode module

Goo Kim Dong, Han Haksoo, Seong Su Park, Joo Gwanchong, Min Kyu Song, Hwang Nam, Seung Goo Kang, Hee Tae Lee, Hyung Moo Park

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.

Original languageEnglish
Pages (from-to)872-875
Number of pages4
JournalProceedings - Electronic Components and Technology Conference
Publication statusPublished - 1995 Jan 1
EventProceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA
Duration: 1995 May 211995 May 24

Fingerprint

Semiconductor lasers
Modulation
Bandwidth
Bias currents
SPICE
Optical communication
Soldering alloys
Packaging
Communication systems
Wire

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Dong, Goo Kim ; Haksoo, Han ; Park, Seong Su ; Gwanchong, Joo ; Song, Min Kyu ; Nam, Hwang ; Kang, Seung Goo ; Lee, Hee Tae ; Park, Hyung Moo. / Application of the flip-chip bonding technique to the 10 Gbps laser diode module. In: Proceedings - Electronic Components and Technology Conference. 1995 ; pp. 872-875.
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abstract = "Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.",
author = "Dong, {Goo Kim} and Han Haksoo and Park, {Seong Su} and Joo Gwanchong and Song, {Min Kyu} and Hwang Nam and Kang, {Seung Goo} and Lee, {Hee Tae} and Park, {Hyung Moo}",
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Dong, GK, Haksoo, H, Park, SS, Gwanchong, J, Song, MK, Nam, H, Kang, SG, Lee, HT & Park, HM 1995, 'Application of the flip-chip bonding technique to the 10 Gbps laser diode module', Proceedings - Electronic Components and Technology Conference, pp. 872-875.

Application of the flip-chip bonding technique to the 10 Gbps laser diode module. / Dong, Goo Kim; Haksoo, Han; Park, Seong Su; Gwanchong, Joo; Song, Min Kyu; Nam, Hwang; Kang, Seung Goo; Lee, Hee Tae; Park, Hyung Moo.

In: Proceedings - Electronic Components and Technology Conference, 01.01.1995, p. 872-875.

Research output: Contribution to journalConference article

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T1 - Application of the flip-chip bonding technique to the 10 Gbps laser diode module

AU - Dong, Goo Kim

AU - Haksoo, Han

AU - Park, Seong Su

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AU - Song, Min Kyu

AU - Nam, Hwang

AU - Kang, Seung Goo

AU - Lee, Hee Tae

AU - Park, Hyung Moo

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AB - Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.

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