Approaches to decrease the processing temperature for a solution-processed InZnO Thin-film transistors

Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this paper, the formation of a dual active layer (DAL) and utilization of a nitrate precursor are proposed to decrease the processing temperature for solution-processed thin-film transistors (TFTs). In the DAL approach, the conductivity decline of a conventional solution-processed AlInZnO (AIZO) was complemented by stacking a highly conductive InZnO (IZO) layer at the bottom of the DAL structure. Further decrease in processing temperature was achieved for the IZO TFT with a zinc nitrate precursor, which showed a weaker decomposition behavior than Zn acetate. Using DAL and the nitrate precursor, TFTs with field-effect mobilities of 2.89 (fabricated at 350 °C) and 0.21 cm2 V-1 s-1 (fabricated at 250 ° C) were achieved, respectively.

Original languageEnglish
Article number03BB06
JournalJapanese journal of applied physics
Volume52
Issue number3 PART 2
DOIs
Publication statusPublished - 2013 Mar

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Approaches to decrease the processing temperature for a solution-processed InZnO Thin-film transistors'. Together they form a unique fingerprint.

  • Cite this