In this paper, the formation of a dual active layer (DAL) and utilization of a nitrate precursor are proposed to decrease the processing temperature for solution-processed thin-film transistors (TFTs). In the DAL approach, the conductivity decline of a conventional solution-processed AlInZnO (AIZO) was complemented by stacking a highly conductive InZnO (IZO) layer at the bottom of the DAL structure. Further decrease in processing temperature was achieved for the IZO TFT with a zinc nitrate precursor, which showed a weaker decomposition behavior than Zn acetate. Using DAL and the nitrate precursor, TFTs with field-effect mobilities of 2.89 (fabricated at 350 °C) and 0.21 cm2 V-1 s-1 (fabricated at 250 ° C) were achieved, respectively.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)