Area selective atomic layer deposition of cobalt thin films

Han Bo Ram Lee, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Citations (Scopus)

Abstract

Area selective atomic layer deposition (ALD) of Co thin films was investigated by using octadecyltrichlorosilane (OTS) selfassembled monolayer (SAM) as a blocking layer. Selective deposition was not observed in Co plasma enhanced ALD (PE-ALD) by CoCp2 and NH3 plasma, which was found to be due to the rapid degradation of OTS SAM. In contrast to PE-ALD, thermal ALD Co by Co(AMD)2 and H2 produced area selective deposition up to 1000 cycles.

Original languageEnglish
Title of host publicationECS Transactions - Atomic Layer Deposition Applications 4
Pages219-225
Number of pages7
Edition4
DOIs
Publication statusPublished - 2008 Dec 1
EventAtomic Layer Deposition Applications 4 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number4
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAtomic Layer Deposition Applications 4 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Area selective atomic layer deposition of cobalt thin films'. Together they form a unique fingerprint.

  • Cite this

    Lee, H. B. R., & Kim, H. (2008). Area selective atomic layer deposition of cobalt thin films. In ECS Transactions - Atomic Layer Deposition Applications 4 (4 ed., pp. 219-225). (ECS Transactions; Vol. 16, No. 4). https://doi.org/10.1149/1.2979997