@inproceedings{eac0464d2e04446aab3f6f4a2d47a0f0,
title = "Area selective atomic layer deposition of cobalt thin films",
abstract = "Area selective atomic layer deposition (ALD) of Co thin films was investigated by using octadecyltrichlorosilane (OTS) selfassembled monolayer (SAM) as a blocking layer. Selective deposition was not observed in Co plasma enhanced ALD (PE-ALD) by CoCp2 and NH3 plasma, which was found to be due to the rapid degradation of OTS SAM. In contrast to PE-ALD, thermal ALD Co by Co(AMD)2 and H2 produced area selective deposition up to 1000 cycles.",
author = "Lee, {Han Bo Ram} and Hyungjun Kim",
year = "2009",
doi = "10.1149/1.2979997",
language = "English",
isbn = "9781566776509",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "219--225",
booktitle = "ECS Transactions - Atomic Layer Deposition Applications 4",
edition = "4",
note = "Atomic Layer Deposition Applications 4 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}