Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates

Jihyun Kim, Myeongjin Jung, Dong Un Lim, Dongjoon Rhee, Sung Hyeon Jung, Hyung Koun Cho, Han Ki Kim, Jeong Ho Cho, Joohoon Kang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Multi-valued logic gates are demonstrated on solution-processed molybdenum disulfide (MoS2) thin films. A simple chemical doping process is added to the conventional transistor fabrication procedure to locally increase the work function of MoS2 by decreasing sulfur vacancies. The resulting device exhibits pseudo-heterojunctions comprising as-processed MoS2 and chemically treated MoS2 (c-MoS2). The energy-band misalignment of MoS2 and c-MoS2 results in a sequential activation of the MoS2 and c-MoS2 channel areas under a gate voltage sweep, which generates a stable intermediate state for ternary operation. Current levels and turn-on voltages for each state can be tuned by modulating the device geometries, including the channel thickness and length. The optimized ternary transistors are incorporated to demonstrate various ternary logic gates, including the inverter, NMIN, and NMAX gates.

Original languageEnglish
Pages (from-to)570-577
Number of pages8
JournalNano letters
Issue number2
Publication statusPublished - 2022 Jan 26

Bibliographical note

Funding Information:
This study was supported by National Research Foundation of Korea (NRF) grants funded by the Korean Government (MSIT) (2020R1C1C1009381 and 2020R1A4A2002806) and the Korea Basic Science Institute (KBSI) National Research Facilities and Equipment Center (NFEC) grant funded by the Korean Government (Ministry of Education) (2019R1A6C1010031).

Publisher Copyright:
© 2021 American Chemical Society

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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