Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.
Bibliographical noteFunding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2014R1A1A2059845 ), and by the MOTIE ( Ministry of Trade, Industry & Energy ( 10053098 )) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. J.T.T. gratefully acknowledges the Academy of Finland (Grant 256800/2012 ) and the Finnish Cultural Foundation for financial support.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)