Abstract
Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 88-92 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 16 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Area-selective chemical vapor deposition of Co for Cu capping layer. / Ryu, Seung Wook; Kim, Soohyeon; Yoon, Jaehong; Tanskanen, Jukka T.; Kim, Hyungjun; Lee, Han Bo Ram.
In: Current Applied Physics, Vol. 16, No. 1, 01.01.2016, p. 88-92.Research output: Contribution to journal › Article
TY - JOUR
T1 - Area-selective chemical vapor deposition of Co for Cu capping layer
AU - Ryu, Seung Wook
AU - Kim, Soohyeon
AU - Yoon, Jaehong
AU - Tanskanen, Jukka T.
AU - Kim, Hyungjun
AU - Lee, Han Bo Ram
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.
AB - Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.
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UR - http://www.scopus.com/inward/citedby.url?scp=84946780416&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.10.013
DO - 10.1016/j.cap.2015.10.013
M3 - Article
VL - 16
SP - 88
EP - 92
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1
ER -