Area-selective chemical vapor deposition of Co for Cu capping layer

Seung Wook Ryu; Soohyeon Kim; Jaehong Yoon; Jukka T. Tanskanen; Hyungjun Kim; Han Bo Ram Lee

doi:10.1016/j.cap.2015.10.013

Area-selective chemical vapor deposition of Co for Cu capping layer

Seung Wook Ryu, Soohyeon Kim, Jaehong Yoon, Jukka T. Tanskanen, Hyungjun Kim, Han Bo Ram Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)₂ has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO₂ than that of Co₂(CO)₈ (22.9 kcal/mol). This indicates that CoCp(CO)₂ could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO₂ and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH₃ plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.

Original language	English
Pages (from-to)	88-92
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2015.10.013
Publication status	Published - 2016 Jan 1

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2014R1A1A2059845 ), and by the MOTIE ( Ministry of Trade, Industry & Energy ( 10053098 )) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. J.T.T. gratefully acknowledges the Academy of Finland (Grant 256800/2012 ) and the Finnish Cultural Foundation for financial support.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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title = "Area-selective chemical vapor deposition of Co for Cu capping layer",

abstract = "Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.",

author = "Ryu, {Seung Wook} and Soohyeon Kim and Jaehong Yoon and Tanskanen, {Jukka T.} and Hyungjun Kim and Lee, {Han Bo Ram}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2014R1A1A2059845 ), and by the MOTIE ( Ministry of Trade, Industry & Energy ( 10053098 )) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. J.T.T. gratefully acknowledges the Academy of Finland (Grant 256800/2012 ) and the Finnish Cultural Foundation for financial support.",

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AU - Ryu, Seung Wook

AU - Kim, Soohyeon

AU - Yoon, Jaehong

AU - Tanskanen, Jukka T.

AU - Kim, Hyungjun

AU - Lee, Han Bo Ram

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2014R1A1A2059845 ), and by the MOTIE ( Ministry of Trade, Industry & Energy ( 10053098 )) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. J.T.T. gratefully acknowledges the Academy of Finland (Grant 256800/2012 ) and the Finnish Cultural Foundation for financial support.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.

AB - Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.

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