Area-selective chemical vapor deposition of Co for Cu capping layer

Seung Wook Ryu, Soohyeon Kim, Jaehong Yoon, Jukka T. Tanskanen, Hyungjun Kim, Han Bo Ram Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Selective chemical vapor deposition (CVD) of Co on Cu interconnect lines is an advantageous method because it can simplify unit process and suppress side effects resulting from the metal etching process. Density functional theory calculations show that CoCp(CO)2 has a relatively higher kinetic barrier (36.2 kcal/mol) on SiO2 than that of Co2(CO)8 (22.9 kcal/mol). This indicates that CoCp(CO)2 could be a promising candidate as a Co precursor for selective CVD. Selective CVD of Co films is demonstrated experimentally by deposition on SiO2 and Cu substrates at 200 and 300 °C. To reduce C contents in the deposited film, a NH3 plasma process is adopted into conventional CVD in a cyclic CVD process. This process enables deposition of Co films with lower C content while maintaining selective deposition.

Original languageEnglish
Pages (from-to)88-92
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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