Arsenic doping of ZnO nanowires by post-annealing treatment

Woong Lee, Min Chang Jeong, Sang Woo Joo, Jae Min Myoung

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Arsenic doping of ZnO nanowires for building blocks of potential nanoscale photonic devices is reported. It was demonstrated in high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy that arsenic could be doped into the substitutional sites in ZnO lattice by post-annealing samples grown on GaAs substrates without degradation of the crystalline and optical qualities. In a series of photoluminescence (PL) spectroscopy observations, arsenic-doped ZnO nanowires exhibited emission due to acceptor-bound excitons at room temperature. The observed emission characteristics implied that the dopant arsenic formed a hydrogen-like acceptor, suggesting the feasibility of producing possibly p-type ZnO nanowires via a simple route.

Original languageEnglish
Pages (from-to)764-768
Number of pages5
JournalNanotechnology
Volume16
Issue number6
DOIs
Publication statusPublished - 2005 Jun 1

Fingerprint

Arsenic
Nanowires
Doping (additives)
Annealing
Photonic devices
Photoluminescence spectroscopy
High resolution transmission electron microscopy
Excitons
Raman spectroscopy
Hydrogen
Crystalline materials
Degradation
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Lee, Woong ; Jeong, Min Chang ; Joo, Sang Woo ; Myoung, Jae Min. / Arsenic doping of ZnO nanowires by post-annealing treatment. In: Nanotechnology. 2005 ; Vol. 16, No. 6. pp. 764-768.
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Arsenic doping of ZnO nanowires by post-annealing treatment. / Lee, Woong; Jeong, Min Chang; Joo, Sang Woo; Myoung, Jae Min.

In: Nanotechnology, Vol. 16, No. 6, 01.06.2005, p. 764-768.

Research output: Contribution to journalArticle

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