Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

Hyungjun Kim, G. Glass, J. A.N.T. Soares, P. Desjardins, J. E. Greene

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effects of As doping, at concentrations CAs≤4.8 × 1018 cm-3, on the growth kinetics of Si(001):As layers deposited at temperatures Ts = 575-900°C by gas-source molecular-beam epitaxy from Si2H6 and AsH3 have been investigated. With constant AsH3 and Si2H6 fluxes, film deposition rates RSi increase while CAs decreases with increasing Ts. All incorporated As resides at substitutional electrically active sites for CAs up to 3.8 × 1018 cm-3 (Ts = 800°C), the highest value yet reported for Si(001):As growth from hydride source gases. Immediately following film growth or partial-monolayer As adsorption on clean Si(001), the samples were quenched to 300°C and exposed to atomic deuterium (D) until saturation coverage. In situ D2 temperature-programmed desorption (TPD) spectra from both as-deposited Si(001):As and As-adsorbed Si(001) layers are composed of β1 and β2 peaks, due to D2 desorption from Si monodeuteride and dideuteride surface phases, together with a new peak β3, which we attribute to desorption from Si-As mixed dimers. Analyses of the TPD spectra show that, because of the lone-pair electrons associated with each As surface atom, the total dangling-bond coverage, and hence RSi, decreases with increasing incoming flux JAsH3 at constant Ts. From measurements of the steady-state As surface coverage θAs vs CAs and Ts, we obtain an As surface segregation enthalpy ΔHs = -0.92 eV. Dissociative AsH3 adsorption on Si(001) was found to follow second-order kinetics with a relatively Ts-independent reactive sticking probability of 0.3. Associative As2 desorption is also second order with a rate constant kd,As2 = 1 × 1013 exp(-3.0 eV/kTs). From the combined set of results, we develop a predictive model with no fitting parameters for CAs vs JAsH3, JSi2H6, and Ts.

Original languageEnglish
Pages (from-to)7067-7078
Number of pages12
JournalJournal of Applied Physics
Volume88
Issue number12
DOIs
Publication statusPublished - 2000 Dec 15

Fingerprint

arsenic
molecular beam epitaxy
desorption
kinetics
gases
adsorption
hydrides
temperature
deuterium
enthalpy
dimers
saturation
atoms
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Hyungjun ; Glass, G. ; Soares, J. A.N.T. ; Desjardins, P. ; Greene, J. E. / Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3 : Effects on film-growth kinetics. In: Journal of Applied Physics. 2000 ; Vol. 88, No. 12. pp. 7067-7078.
@article{1ccb1ecb0d374bdd98b8c6da92143d0b,
title = "Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics",
abstract = "The effects of As doping, at concentrations CAs≤4.8 × 1018 cm-3, on the growth kinetics of Si(001):As layers deposited at temperatures Ts = 575-900°C by gas-source molecular-beam epitaxy from Si2H6 and AsH3 have been investigated. With constant AsH3 and Si2H6 fluxes, film deposition rates RSi increase while CAs decreases with increasing Ts. All incorporated As resides at substitutional electrically active sites for CAs up to 3.8 × 1018 cm-3 (Ts = 800°C), the highest value yet reported for Si(001):As growth from hydride source gases. Immediately following film growth or partial-monolayer As adsorption on clean Si(001), the samples were quenched to 300°C and exposed to atomic deuterium (D) until saturation coverage. In situ D2 temperature-programmed desorption (TPD) spectra from both as-deposited Si(001):As and As-adsorbed Si(001) layers are composed of β1 and β2 peaks, due to D2 desorption from Si monodeuteride and dideuteride surface phases, together with a new peak β3, which we attribute to desorption from Si-As mixed dimers. Analyses of the TPD spectra show that, because of the lone-pair electrons associated with each As surface atom, the total dangling-bond coverage, and hence RSi, decreases with increasing incoming flux JAsH3 at constant Ts. From measurements of the steady-state As surface coverage θAs vs CAs and Ts, we obtain an As surface segregation enthalpy ΔHs = -0.92 eV. Dissociative AsH3 adsorption on Si(001) was found to follow second-order kinetics with a relatively Ts-independent reactive sticking probability of 0.3. Associative As2 desorption is also second order with a rate constant kd,As2 = 1 × 1013 exp(-3.0 eV/kTs). From the combined set of results, we develop a predictive model with no fitting parameters for CAs vs JAsH3, JSi2H6, and Ts.",
author = "Hyungjun Kim and G. Glass and Soares, {J. A.N.T.} and P. Desjardins and Greene, {J. E.}",
year = "2000",
month = "12",
day = "15",
doi = "10.1063/1.1324701",
language = "English",
volume = "88",
pages = "7067--7078",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3 : Effects on film-growth kinetics. / Kim, Hyungjun; Glass, G.; Soares, J. A.N.T.; Desjardins, P.; Greene, J. E.

In: Journal of Applied Physics, Vol. 88, No. 12, 15.12.2000, p. 7067-7078.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3

T2 - Effects on film-growth kinetics

AU - Kim, Hyungjun

AU - Glass, G.

AU - Soares, J. A.N.T.

AU - Desjardins, P.

AU - Greene, J. E.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - The effects of As doping, at concentrations CAs≤4.8 × 1018 cm-3, on the growth kinetics of Si(001):As layers deposited at temperatures Ts = 575-900°C by gas-source molecular-beam epitaxy from Si2H6 and AsH3 have been investigated. With constant AsH3 and Si2H6 fluxes, film deposition rates RSi increase while CAs decreases with increasing Ts. All incorporated As resides at substitutional electrically active sites for CAs up to 3.8 × 1018 cm-3 (Ts = 800°C), the highest value yet reported for Si(001):As growth from hydride source gases. Immediately following film growth or partial-monolayer As adsorption on clean Si(001), the samples were quenched to 300°C and exposed to atomic deuterium (D) until saturation coverage. In situ D2 temperature-programmed desorption (TPD) spectra from both as-deposited Si(001):As and As-adsorbed Si(001) layers are composed of β1 and β2 peaks, due to D2 desorption from Si monodeuteride and dideuteride surface phases, together with a new peak β3, which we attribute to desorption from Si-As mixed dimers. Analyses of the TPD spectra show that, because of the lone-pair electrons associated with each As surface atom, the total dangling-bond coverage, and hence RSi, decreases with increasing incoming flux JAsH3 at constant Ts. From measurements of the steady-state As surface coverage θAs vs CAs and Ts, we obtain an As surface segregation enthalpy ΔHs = -0.92 eV. Dissociative AsH3 adsorption on Si(001) was found to follow second-order kinetics with a relatively Ts-independent reactive sticking probability of 0.3. Associative As2 desorption is also second order with a rate constant kd,As2 = 1 × 1013 exp(-3.0 eV/kTs). From the combined set of results, we develop a predictive model with no fitting parameters for CAs vs JAsH3, JSi2H6, and Ts.

AB - The effects of As doping, at concentrations CAs≤4.8 × 1018 cm-3, on the growth kinetics of Si(001):As layers deposited at temperatures Ts = 575-900°C by gas-source molecular-beam epitaxy from Si2H6 and AsH3 have been investigated. With constant AsH3 and Si2H6 fluxes, film deposition rates RSi increase while CAs decreases with increasing Ts. All incorporated As resides at substitutional electrically active sites for CAs up to 3.8 × 1018 cm-3 (Ts = 800°C), the highest value yet reported for Si(001):As growth from hydride source gases. Immediately following film growth or partial-monolayer As adsorption on clean Si(001), the samples were quenched to 300°C and exposed to atomic deuterium (D) until saturation coverage. In situ D2 temperature-programmed desorption (TPD) spectra from both as-deposited Si(001):As and As-adsorbed Si(001) layers are composed of β1 and β2 peaks, due to D2 desorption from Si monodeuteride and dideuteride surface phases, together with a new peak β3, which we attribute to desorption from Si-As mixed dimers. Analyses of the TPD spectra show that, because of the lone-pair electrons associated with each As surface atom, the total dangling-bond coverage, and hence RSi, decreases with increasing incoming flux JAsH3 at constant Ts. From measurements of the steady-state As surface coverage θAs vs CAs and Ts, we obtain an As surface segregation enthalpy ΔHs = -0.92 eV. Dissociative AsH3 adsorption on Si(001) was found to follow second-order kinetics with a relatively Ts-independent reactive sticking probability of 0.3. Associative As2 desorption is also second order with a rate constant kd,As2 = 1 × 1013 exp(-3.0 eV/kTs). From the combined set of results, we develop a predictive model with no fitting parameters for CAs vs JAsH3, JSi2H6, and Ts.

UR - http://www.scopus.com/inward/record.url?scp=0001327311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001327311&partnerID=8YFLogxK

U2 - 10.1063/1.1324701

DO - 10.1063/1.1324701

M3 - Article

AN - SCOPUS:0001327311

VL - 88

SP - 7067

EP - 7078

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -