Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition

Shizuo Fujita; Sang Woo Kim; Masaya Ueda; Shigeo Fujita

doi:10.1016/j.jcrysgro.2004.08.078

Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition

Shizuo Fujita, Sang Woo Kim, Masaya Ueda, Shigeo Fujita

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130 ± 10 and 18 ± 5nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.

Original language	English
Pages (from-to)	138-142
Number of pages	5
Journal	Journal of Crystal Growth
Volume	272
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.078
Publication status	Published - 2004 Dec 10

Bibliographical note

Funding Information:
This work was partly supported by a Grant-in-Aid for Scientific Research and also by Grants for Regional Science and Technology Promotion, from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.08.078

Cite this

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title = "Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition",

abstract = "Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130 ± 10 and 18 ± 5nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.",

author = "Shizuo Fujita and Kim, {Sang Woo} and Masaya Ueda and Shigeo Fujita",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research and also by Grants for Regional Science and Technology Promotion, from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.",

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doi = "10.1016/j.jcrysgro.2004.08.078",

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T1 - Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition

AU - Fujita, Shizuo

AU - Kim, Sang Woo

AU - Ueda, Masaya

AU - Fujita, Shigeo

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research and also by Grants for Regional Science and Technology Promotion, from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130 ± 10 and 18 ± 5nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.

AB - Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130 ± 10 and 18 ± 5nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.

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Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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