Advantage and role of focused ion beam (FIB) for nanopatterning of the substrates toward the artificial control of self-assembly processes of semiconductor nanostructures are shown and discussed. Two-dimensional ZnO nanodot arrays well-ordered in size and position of the nanodots are demonstrated, for example, the nanodots with diameter of 130 ± 10 and 18 ± 5nm were two dimensionally arrayed with periods of 750 and 100 nm, respectively. Gallium implanted in the FIB-nanopatterning is suggested as a plausible reason for the selective nucleation of ZnO nanodots on nanopatterned substrates.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Issue number||1-4 SPEC. ISS.|
|Publication status||Published - 2004 Dec 10|
Bibliographical noteFunding Information:
This work was partly supported by a Grant-in-Aid for Scientific Research and also by Grants for Regional Science and Technology Promotion, from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry