Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

Si Joon Kim, Byeonghoon Kim, Joohye Jung, Doo Hyun Yoon, Junwye Lee, Sung Ha Park, Hyun Jae Kim

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( FET) of 0.07 cm 2/Vs and an on-current (I on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in FET (0.02 cm 2/Vs) and I on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

Original languageEnglish
Article number103702
JournalApplied Physics Letters
Volume100
Issue number10
DOIs
Publication statusPublished - 2012 Mar 5

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transistors
deoxyribonucleic acid
thin films
immobilization
threshold voltage
crossovers
phosphates
electrostatics
shift
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Si Joon ; Kim, Byeonghoon ; Jung, Joohye ; Yoon, Doo Hyun ; Lee, Junwye ; Park, Sung Ha ; Kim, Hyun Jae. / Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors. In: Applied Physics Letters. 2012 ; Vol. 100, No. 10.
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abstract = "A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( FET) of 0.07 cm 2/Vs and an on-current (I on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in FET (0.02 cm 2/Vs) and I on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.",
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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors. / Kim, Si Joon; Kim, Byeonghoon; Jung, Joohye; Yoon, Doo Hyun; Lee, Junwye; Park, Sung Ha; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 100, No. 10, 103702, 05.03.2012.

Research output: Contribution to journalArticle

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