Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates

Sum Gyun Yi, Myung Uk Park, Sung Hyun Kim, Chang Jun Lee, Junyoung Kwon, Gwan Hyoung Lee, Kyung Hwa Yoo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS2 and Au, as well as between the floating gate MoS2 and the channel MoS2, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS2-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS2-based flash memory devices with double floating gates.

Original languageEnglish
Pages (from-to)31480-31487
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number37
DOIs
Publication statusPublished - 2018 Sep 19

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Flash memory
Boron nitride
Data storage equipment
Plasticity
Substrates
Flexible electronics
Electron injection
Electron tunneling
boron nitride
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yi, Sum Gyun ; Park, Myung Uk ; Kim, Sung Hyun ; Lee, Chang Jun ; Kwon, Junyoung ; Lee, Gwan Hyoung ; Yoo, Kyung Hwa. / Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 37. pp. 31480-31487.
@article{b36f2085647c40c0a41cd1ec6e59d14e,
title = "Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates",
abstract = "We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS2 and Au, as well as between the floating gate MoS2 and the channel MoS2, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS2-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS2-based flash memory devices with double floating gates.",
author = "Yi, {Sum Gyun} and Park, {Myung Uk} and Kim, {Sung Hyun} and Lee, {Chang Jun} and Junyoung Kwon and Lee, {Gwan Hyoung} and Yoo, {Kyung Hwa}",
year = "2018",
month = "9",
day = "19",
doi = "10.1021/acsami.8b10203",
language = "English",
volume = "10",
pages = "31480--31487",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "37",

}

Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates. / Yi, Sum Gyun; Park, Myung Uk; Kim, Sung Hyun; Lee, Chang Jun; Kwon, Junyoung; Lee, Gwan Hyoung; Yoo, Kyung Hwa.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 37, 19.09.2018, p. 31480-31487.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates

AU - Yi, Sum Gyun

AU - Park, Myung Uk

AU - Kim, Sung Hyun

AU - Lee, Chang Jun

AU - Kwon, Junyoung

AU - Lee, Gwan Hyoung

AU - Yoo, Kyung Hwa

PY - 2018/9/19

Y1 - 2018/9/19

N2 - We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS2 and Au, as well as between the floating gate MoS2 and the channel MoS2, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS2-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS2-based flash memory devices with double floating gates.

AB - We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS2 and Au, as well as between the floating gate MoS2 and the channel MoS2, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS2-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS2-based flash memory devices with double floating gates.

UR - http://www.scopus.com/inward/record.url?scp=85052308452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052308452&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b10203

DO - 10.1021/acsami.8b10203

M3 - Article

AN - SCOPUS:85052308452

VL - 10

SP - 31480

EP - 31487

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 37

ER -