We fabricated MoS2-based flash memory devices by stacking MoS2 and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS2 and Au, as well as between the floating gate MoS2 and the channel MoS2, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS2-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS2-based flash memory devices with double floating gates.
Bibliographical noteFunding Information:
This work has been financially supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant Nos. 2016R1A2B3011980 and 2017R1A2B2006568).
© 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)