Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10-9 Ω·cm? target?

Prasad Sarangapani, Cory Weber, Jiwon Chang, Stephen Cea, Roksana Golizadeh-Mojarad, Michael Povolotskyi, Gerhard Klimeck, Tillmann Kubis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10-9 Ω·cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.

Original languageEnglish
Title of host publication2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages83-84
Number of pages2
ISBN (Electronic)9781509030286
DOIs
Publication statusPublished - 2017 Nov 21
Event17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States
Duration: 2017 Jul 252017 Jul 28

Publication series

Name2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference17th IEEE International Conference on Nanotechnology, NANO 2017
CountryUnited States
CityPittsburgh
Period17/7/2517/7/28

Bibliographical note

Funding Information:
This work was supported by the Intel Corporation. We acknowledge the Rosen Center for Advanced Computing at Purdue University for the use of their computing resources and technical support. This work is also part of the Accelerating Nano-scale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (award number OCI-0832623).

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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