Asymmetric independent-gate MOSFET SRAM for high stability

Mingu Kang, H. K. Park, J. Wang, G. Yeap, S. O. Jung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this paper, the application of an asymmetric independent-gate MOSFET (IG-MOSFET) to the bit-cell structures of the SRAM schemes that were previously proposed using the symmetric IG-MOSFET is analyzed. In addition, a novel SRAM scheme with the asymmetric IG-MOSFET is proposed to improve read stability and writeability by controlling the back gates of pass-gate and pull-up transistors. New array architecture is also suggested to prevent read stability degradation in the half-selected cell, where word line is selected but bit line is unselected. The previous SRAMs with IG-MOSFET (IG-SRAMs) fail to simultaneously improve read stability and writeability compared to the SRAM with the tied-gate MOSFET. The proposed IG-SRAM significantly improves both read stability and writeability at the cost of slightly increased bit-cell area and read delay, as compared to the previous IG-SRAMs.

Original languageEnglish
Article number5961617
Pages (from-to)2959-2965
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

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Static random access storage
Transistors
Degradation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kang, Mingu ; Park, H. K. ; Wang, J. ; Yeap, G. ; Jung, S. O. / Asymmetric independent-gate MOSFET SRAM for high stability. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 9. pp. 2959-2965.
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Asymmetric independent-gate MOSFET SRAM for high stability. / Kang, Mingu; Park, H. K.; Wang, J.; Yeap, G.; Jung, S. O.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 9, 5961617, 01.09.2011, p. 2959-2965.

Research output: Contribution to journalArticle

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