Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a 〈110〉 bulk silicon wafer

Il Joo Cho, Eun Chul Park, Songcheol Hong, Euisik Yoon

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2 Citations (Scopus)

Abstract

A new method of fabricating atomic force microscope (AFM) probe tip is presented. In this process, the probe tips were implemented using self-aligned heavily boron-doped silicon cantilevers in a 〈110〉 bulk silicon wafer. In this structure, a stress-free cantilever can be easily defined by selective etch stop by the heavily boron-doped region in an anisotropic silicon etchant. The proposed tips do not require expensive silicon on insulator (SOI) wafers and double-side alignment. The probe tip dimensions can be exactly defined regardless of wafer thickness by the self-aligned etch from the front side. In addition, the cantilever thickness can be easily controlled by adjusting the diffusion time, and fabricated at low cost by using bulk silicon wafers. The fabricated probe tips showed resonant frequencies of 71.420 kHz with a 1.8-μm-thick probe tip and 122.660 kHz with a 3.0-μm-thick probe tip. Using the two fabricated probe tips, we successfully demonstrate image scanning of a 1 μm grating reference sample in contact and noncontact modes, respectively.

Original languageEnglish
Pages (from-to)7103-7107
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number12 B
Publication statusPublished - 2000 Dec 1

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Silicon wafers
Boron
boron
Microscopes
microscopes
wafers
Silicon
probes
silicon
etchants
Natural frequencies
resonant frequencies
Scanning
adjusting
alignment
insulators
gratings
scanning
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "A new method of fabricating atomic force microscope (AFM) probe tip is presented. In this process, the probe tips were implemented using self-aligned heavily boron-doped silicon cantilevers in a 〈110〉 bulk silicon wafer. In this structure, a stress-free cantilever can be easily defined by selective etch stop by the heavily boron-doped region in an anisotropic silicon etchant. The proposed tips do not require expensive silicon on insulator (SOI) wafers and double-side alignment. The probe tip dimensions can be exactly defined regardless of wafer thickness by the self-aligned etch from the front side. In addition, the cantilever thickness can be easily controlled by adjusting the diffusion time, and fabricated at low cost by using bulk silicon wafers. The fabricated probe tips showed resonant frequencies of 71.420 kHz with a 1.8-μm-thick probe tip and 122.660 kHz with a 3.0-μm-thick probe tip. Using the two fabricated probe tips, we successfully demonstrate image scanning of a 1 μm grating reference sample in contact and noncontact modes, respectively.",
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AB - A new method of fabricating atomic force microscope (AFM) probe tip is presented. In this process, the probe tips were implemented using self-aligned heavily boron-doped silicon cantilevers in a 〈110〉 bulk silicon wafer. In this structure, a stress-free cantilever can be easily defined by selective etch stop by the heavily boron-doped region in an anisotropic silicon etchant. The proposed tips do not require expensive silicon on insulator (SOI) wafers and double-side alignment. The probe tip dimensions can be exactly defined regardless of wafer thickness by the self-aligned etch from the front side. In addition, the cantilever thickness can be easily controlled by adjusting the diffusion time, and fabricated at low cost by using bulk silicon wafers. The fabricated probe tips showed resonant frequencies of 71.420 kHz with a 1.8-μm-thick probe tip and 122.660 kHz with a 3.0-μm-thick probe tip. Using the two fabricated probe tips, we successfully demonstrate image scanning of a 1 μm grating reference sample in contact and noncontact modes, respectively.

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