Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

Goutam Dalapati Kumar, Sandipan Chakraborty, Chandreswar Mahata, Maruf Amin Bhuiyan, Jianrong Dong, Aneesa Iskander, Saied Masudy-Panah, Sanghamitra Dinda, Ren Bin Yang, Taeyoon Lee, Dongzhi Chi, Ching Kean Chia

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6 Citations (Scopus)


Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalMaterials Letters
Publication statusPublished - 2015 Oct 1

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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