Abstract
Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.
| Original language | English |
|---|---|
| Pages (from-to) | 105-108 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 156 |
| DOIs | |
| Publication status | Published - 2015 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. / Kumar, Goutam Dalapati; Chakraborty, Sandipan; Mahata, Chandreswar; Amin Bhuiyan, Maruf; Dong, Jianrong; Iskander, Aneesa; Masudy-Panah, Saied; Dinda, Sanghamitra; Bin Yang, Ren; Lee, Taeyoon; Chi, Dongzhi; Kean Chia, Ching.
In: Materials Letters, Vol. 156, 01.10.2015, p. 105-108.Research output: Contribution to journal › Article
TY - JOUR
T1 - Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application
AU - Kumar, Goutam Dalapati
AU - Chakraborty, Sandipan
AU - Mahata, Chandreswar
AU - Amin Bhuiyan, Maruf
AU - Dong, Jianrong
AU - Iskander, Aneesa
AU - Masudy-Panah, Saied
AU - Dinda, Sanghamitra
AU - Bin Yang, Ren
AU - Lee, Taeyoon
AU - Chi, Dongzhi
AU - Kean Chia, Ching
PY - 2015/10/1
Y1 - 2015/10/1
N2 - Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.
AB - Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.
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U2 - 10.1016/j.matlet.2015.05.001
DO - 10.1016/j.matlet.2015.05.001
M3 - Article
VL - 156
SP - 105
EP - 108
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -