Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

Goutam Dalapati Kumar, Sandipan Chakraborty, Chandreswar Mahata, Maruf Amin Bhuiyan, Jianrong Dong, Aneesa Iskander, Saied Masudy-Panah, Sanghamitra Dinda, Ren Bin Yang, Taeyoon Lee, Dongzhi Chi, Ching Kean Chia

Research output: Contribution to journalArticle

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Abstract

Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.

Original languageEnglish
Pages (from-to)105-108
Number of pages4
JournalMaterials Letters
Volume156
DOIs
Publication statusPublished - 2015 Oct 1

Fingerprint

Germanium
Gallium arsenide
gallium
germanium
surface roughness
Surface roughness
Doping (additives)
Gate dielectrics
Buffer layers
metal oxide semiconductors
Hysteresis
gallium arsenide
Materials properties
capacitors
Transistors
Zinc
Capacitors
Permittivity
transistors
Optical properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kumar, G. D., Chakraborty, S., Mahata, C., Amin Bhuiyan, M., Dong, J., Iskander, A., ... Kean Chia, C. (2015). Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. Materials Letters, 156, 105-108. https://doi.org/10.1016/j.matlet.2015.05.001
Kumar, Goutam Dalapati ; Chakraborty, Sandipan ; Mahata, Chandreswar ; Amin Bhuiyan, Maruf ; Dong, Jianrong ; Iskander, Aneesa ; Masudy-Panah, Saied ; Dinda, Sanghamitra ; Bin Yang, Ren ; Lee, Taeyoon ; Chi, Dongzhi ; Kean Chia, Ching. / Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. In: Materials Letters. 2015 ; Vol. 156. pp. 105-108.
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title = "Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application",
abstract = "Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.",
author = "Kumar, {Goutam Dalapati} and Sandipan Chakraborty and Chandreswar Mahata and {Amin Bhuiyan}, Maruf and Jianrong Dong and Aneesa Iskander and Saied Masudy-Panah and Sanghamitra Dinda and {Bin Yang}, Ren and Taeyoon Lee and Dongzhi Chi and {Kean Chia}, Ching",
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Kumar, GD, Chakraborty, S, Mahata, C, Amin Bhuiyan, M, Dong, J, Iskander, A, Masudy-Panah, S, Dinda, S, Bin Yang, R, Lee, T, Chi, D & Kean Chia, C 2015, 'Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application', Materials Letters, vol. 156, pp. 105-108. https://doi.org/10.1016/j.matlet.2015.05.001

Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application. / Kumar, Goutam Dalapati; Chakraborty, Sandipan; Mahata, Chandreswar; Amin Bhuiyan, Maruf; Dong, Jianrong; Iskander, Aneesa; Masudy-Panah, Saied; Dinda, Sanghamitra; Bin Yang, Ren; Lee, Taeyoon; Chi, Dongzhi; Kean Chia, Ching.

In: Materials Letters, Vol. 156, 01.10.2015, p. 105-108.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

AU - Kumar, Goutam Dalapati

AU - Chakraborty, Sandipan

AU - Mahata, Chandreswar

AU - Amin Bhuiyan, Maruf

AU - Dong, Jianrong

AU - Iskander, Aneesa

AU - Masudy-Panah, Saied

AU - Dinda, Sanghamitra

AU - Bin Yang, Ren

AU - Lee, Taeyoon

AU - Chi, Dongzhi

AU - Kean Chia, Ching

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.

AB - Development of high quality p-type epitaxial gallium-arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs with surface roughness of ~0.87 nm was grown on Ge substrates at 675 °C. Thin Al0.3Ga0.7As buffer layer and un-doped GaAs of 300 nm thick were introduced to suppress the Ge defects and auto-doping into epi-GaAs layer. The material and optical properties of the p-type epi-GaAs/un-doped GaAs/Al0.3Ga0.7As/Ge structures were examined through PL and Raman analysis. The metal-oxide-semiconductor capacitor (MOSC) was fabricated using p-type epi-GaAs layer and atomic-layer-deposited Al2O3 gate dielectric. The effective dielectric constant of the Au/Al2O3/p-epi-GaAs gate-stack is 5.9 and hysteresis voltage of 500 mV was observed. The epi-GaAs layer is p-type in nature with doping densities of 5×1017 cm-3.

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U2 - 10.1016/j.matlet.2015.05.001

DO - 10.1016/j.matlet.2015.05.001

M3 - Article

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EP - 108

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -