Atomic layer deposited Al2O3 on high quality p-type epitaxial-GaAs/Ge for advanced III-V/Ge based device application

Goutam Dalapati Kumar, Sandipan Chakraborty, Chandreswar Mahata, Maruf Amin Bhuiyan, Jianrong Dong, Aneesa Iskander, Saied Masudy-Panah, Sanghamitra Dinda, Ren Bin Yang, Taeyoon Lee, Dongzhi Chi, Ching Kean Chia

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