Atomic layer deposition for nanoscale contact applications

Hyungjun Kim, Jaehong Yoon, Han Bo Ram Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We review our efforts on atomic layer deposition (ALD) processes of Co and Ni thin films and their applications for nanoscale contact. First, PE-ALD Co processes was developed using various metal organic precursors and NH 3 plasma as a reactant. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 cm. For this case, epitaxial CoSi 2 was formed through nitride mediated epitaxy, due the formation of a-SiN x interlayer. The effects of nitrogen during PE-ALD Co were also studied by using N 2 /H 2 plasma. To improve the conformality, thermal ALD (T-ALD) using various metal organic precursors including Co(iPr-AMD) 2 were investigated. Similarly, PE-ALD using NH 3 plasma and thermal ALD based on metal organic precursors were developed. Highly conformal Ni film was deposited and the formation of Ni silicide was studied by post-deposition annealing. The film properties were studied using various analysis techniques. Thus, ALD of transition metal is expected to be a viable process for the formation of nanoscale contact in near future device fabrication.

Original languageEnglish
Title of host publication2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
DOIs
Publication statusPublished - 2011 Aug 30
Event2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 - Dresden, Germany
Duration: 2011 May 82011 May 12

Publication series

Name2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Other

Other2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
CountryGermany
CityDresden
Period11/5/811/5/12

Fingerprint

Atomic layer deposition
Metals
Plasmas
Plasma Gases
Epitaxial growth
Nitrides
Transition metals
Nitrogen
Annealing
Fabrication
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Chemistry
  • Metals and Alloys

Cite this

Kim, H., Yoon, J., & Lee, H. B. R. (2011). Atomic layer deposition for nanoscale contact applications. In 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 [5940260] (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011). https://doi.org/10.1109/IITC.2011.5940260
Kim, Hyungjun ; Yoon, Jaehong ; Lee, Han Bo Ram. / Atomic layer deposition for nanoscale contact applications. 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011).
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Kim, H, Yoon, J & Lee, HBR 2011, Atomic layer deposition for nanoscale contact applications. in 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011., 5940260, 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, Dresden, Germany, 11/5/8. https://doi.org/10.1109/IITC.2011.5940260

Atomic layer deposition for nanoscale contact applications. / Kim, Hyungjun; Yoon, Jaehong; Lee, Han Bo Ram.

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. 5940260 (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We review our efforts on atomic layer deposition (ALD) processes of Co and Ni thin films and their applications for nanoscale contact. First, PE-ALD Co processes was developed using various metal organic precursors and NH 3 plasma as a reactant. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 cm. For this case, epitaxial CoSi 2 was formed through nitride mediated epitaxy, due the formation of a-SiN x interlayer. The effects of nitrogen during PE-ALD Co were also studied by using N 2 /H 2 plasma. To improve the conformality, thermal ALD (T-ALD) using various metal organic precursors including Co(iPr-AMD) 2 were investigated. Similarly, PE-ALD using NH 3 plasma and thermal ALD based on metal organic precursors were developed. Highly conformal Ni film was deposited and the formation of Ni silicide was studied by post-deposition annealing. The film properties were studied using various analysis techniques. Thus, ALD of transition metal is expected to be a viable process for the formation of nanoscale contact in near future device fabrication.

AB - We review our efforts on atomic layer deposition (ALD) processes of Co and Ni thin films and their applications for nanoscale contact. First, PE-ALD Co processes was developed using various metal organic precursors and NH 3 plasma as a reactant. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 cm. For this case, epitaxial CoSi 2 was formed through nitride mediated epitaxy, due the formation of a-SiN x interlayer. The effects of nitrogen during PE-ALD Co were also studied by using N 2 /H 2 plasma. To improve the conformality, thermal ALD (T-ALD) using various metal organic precursors including Co(iPr-AMD) 2 were investigated. Similarly, PE-ALD using NH 3 plasma and thermal ALD based on metal organic precursors were developed. Highly conformal Ni film was deposited and the formation of Ni silicide was studied by post-deposition annealing. The film properties were studied using various analysis techniques. Thus, ALD of transition metal is expected to be a viable process for the formation of nanoscale contact in near future device fabrication.

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Kim H, Yoon J, Lee HBR. Atomic layer deposition for nanoscale contact applications. In 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. 5940260. (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011). https://doi.org/10.1109/IITC.2011.5940260