Atomic layer deposition for nonconventional nanomaterials and their applications

Amorphous carbon, germanium oxide, and 2-dimensional transition metal dichalcogenides grown by atomic layer deposition (ALD) are considered as promising materials for advanced nanoscale device fabrication processes and electronic devices, owing to their extraordinary characteristics. Deposition of these materials using ALD can overcome the limitations of current deposition techniques, including poor step coverage and wafer-scale uniformity, and uncontrollable stoichiometry. Despite these advantages, there has been a lack of research into these materials due to the absence of suitable precursors or optimized processes. In this review, we focus on these nonconventional materials, which have rarely been studied using ALD. The latest research progress and future outlook on these materials grown by ALD will be highlighted, with a particular focus on the applications of future nanoscale device fabrication processes and new concepts in device fabrication which could lead to a paradigm shift in electronics.