Amorphous carbon, germanium oxide, and 2-dimensional transition metal dichalcogenides grown by atomic layer deposition (ALD) are considered as promising materials for advanced nanoscale device fabrication processes and electronic devices, owing to their extraordinary characteristics. Deposition of these materials using ALD can overcome the limitations of current deposition techniques, including poor step coverage and wafer-scale uniformity, and uncontrollable stoichiometry. Despite these advantages, there has been a lack of research into these materials due to the absence of suitable precursors or optimized processes. In this review, we focus on these nonconventional materials, which have rarely been studied using ALD. The latest research progress and future outlook on these materials grown by ALD will be highlighted, with a particular focus on the applications of future nanoscale device fabrication processes and new concepts in device fabrication which could lead to a paradigm shift in electronics.
|Number of pages||25|
|Journal||Journal of Materials Research|
|Publication status||Published - 2020 Apr 14|
Bibliographical noteFunding Information:
This work was supported by the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of highly sensitive gas sensor based on chalcogenide 2D nanomaterial], by the Commercialization Promotion Agency for R&D Outcomes (COMPA) funded by the Ministry of Science and ICT (MSIT) [Development of Plasma-based Synthesis Equipment and Process for Two-Dimensional TMDCs], and by the Technology Transfer and Commercialization Program through INNOPOLIS Foundation funded by the Ministry of Science and ICT (2019-GJ-RD-0072/Equipment and Process Development of Large scaled 2D Nanomaterial Synthesis).
© Materials Research Society 2019.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering