Ruthenium (Ru) thin films were grownviaatomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η5-cycloheptadienyl)2(Ru(chd)2) and O2. Self-limiting growth during the Ru ALD process was achieved by varying the Ru precursor and O2feeding times. Metallic Ru films with a low resistivity (10-16 μΩ cm) grew at deposition temperatures between 200 and 300 °C, where the growth per cycle (GPC) during Ru ALD was 0.2 to 0.4 Å cy−1at 265 °C. The Ru incubation times were considerably shorter using the novel precursor (negligible on Pt and TiN, ∼22 cycles on SiO2) compared with those associated with Ru ALD using a high-valency Ru precursor and O2. The characteristics of the Ru film were influenced by the substrate. Specifically, the Pt substrate gave rise to an amorphous film, while crystalline films were grown on the TiN and SiO2substrates, where a high RuOxcontent resulted on the SiO2substrate.
|Number of pages||6|
|Journal||Journal of Materials Chemistry C|
|Publication status||Published - 2021 Mar 21|
Bibliographical noteFunding Information:
This research was supported by a grant from the Development of Smart Chemical Materials for IoT Devices Project (SI2020-20) and the Seed Research Project for future R&D (KK2061-17) through the Korea Research Institute of Chemical Technology and the Development of Novel Ru and Metal precursor for Semiconductor Film Deposition Project (IIT20-04) through the Mecaro Co., Ltd.
© The Royal Society of Chemistry 2021.
All Science Journal Classification (ASJC) codes
- Materials Chemistry