Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Jeong Min Hwang; Seung Min Han; Hanuel Yang; Seungmin Yeo; Seung Hun Lee; Chan Woo Park; Gun Hwan Kim; Bo Keun Park; Younghun Byun; Taeyong Eom; Taek Mo Chung

doi:10.1039/d0tc05682k

Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Jeong Min Hwang, Seung Min Han, Hanuel Yang, Seungmin Yeo, Seung Hun Lee, Chan Woo Park, Gun Hwan Kim, Bo Keun Park, Younghun Byun, Taeyong Eom, Taek Mo Chung

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ruthenium (Ru) thin films were grownviaatomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η⁵-cycloheptadienyl)₂(Ru(chd)₂) and O₂. Self-limiting growth during the Ru ALD process was achieved by varying the Ru precursor and O₂feeding times. Metallic Ru films with a low resistivity (10-16 μΩ cm) grew at deposition temperatures between 200 and 300 °C, where the growth per cycle (GPC) during Ru ALD was 0.2 to 0.4 Å cy⁻¹at 265 °C. The Ru incubation times were considerably shorter using the novel precursor (negligible on Pt and TiN, ∼22 cycles on SiO₂) compared with those associated with Ru ALD using a high-valency Ru precursor and O₂. The characteristics of the Ru film were influenced by the substrate. Specifically, the Pt substrate gave rise to an amorphous film, while crystalline films were grown on the TiN and SiO₂substrates, where a high RuO_xcontent resulted on the SiO₂substrate.

Original language	English
Pages (from-to)	3820-3825
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	9
Issue number	11
DOIs	https://doi.org/10.1039/d0tc05682k
Publication status	Published - 2021 Mar 21

Bibliographical note

Funding Information:
This research was supported by a grant from the Development of Smart Chemical Materials for IoT Devices Project (SI2020-20) and the Seed Research Project for future R&D (KK2061-17) through the Korea Research Institute of Chemical Technology and the Development of Novel Ru and Metal precursor for Semiconductor Film Deposition Project (IIT20-04) through the Mecaro Co., Ltd.

Publisher Copyright:
© The Royal Society of Chemistry 2021.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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10.1039/d0tc05682k

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title = "Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity",

abstract = "Ruthenium (Ru) thin films were grownviaatomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η5-cycloheptadienyl)2(Ru(chd)2) and O2. Self-limiting growth during the Ru ALD process was achieved by varying the Ru precursor and O2feeding times. Metallic Ru films with a low resistivity (10-16 μΩ cm) grew at deposition temperatures between 200 and 300 °C, where the growth per cycle (GPC) during Ru ALD was 0.2 to 0.4 {\AA} cy−1at 265 °C. The Ru incubation times were considerably shorter using the novel precursor (negligible on Pt and TiN, ∼22 cycles on SiO2) compared with those associated with Ru ALD using a high-valency Ru precursor and O2. The characteristics of the Ru film were influenced by the substrate. Specifically, the Pt substrate gave rise to an amorphous film, while crystalline films were grown on the TiN and SiO2substrates, where a high RuOxcontent resulted on the SiO2substrate.",

author = "Hwang, {Jeong Min} and Han, {Seung Min} and Hanuel Yang and Seungmin Yeo and Lee, {Seung Hun} and Park, {Chan Woo} and Kim, {Gun Hwan} and Park, {Bo Keun} and Younghun Byun and Taeyong Eom and Chung, {Taek Mo}",

note = "Funding Information: This research was supported by a grant from the Development of Smart Chemical Materials for IoT Devices Project (SI2020-20) and the Seed Research Project for future R&D (KK2061-17) through the Korea Research Institute of Chemical Technology and the Development of Novel Ru and Metal precursor for Semiconductor Film Deposition Project (IIT20-04) through the Mecaro Co., Ltd. Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2021.",

year = "2021",

month = mar,

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doi = "10.1039/d0tc05682k",

language = "English",

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journal = "Journal of Materials Chemistry C",

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AU - Hwang, Jeong Min

AU - Han, Seung Min

AU - Yang, Hanuel

AU - Yeo, Seungmin

AU - Lee, Seung Hun

AU - Park, Chan Woo

AU - Kim, Gun Hwan

AU - Park, Bo Keun

AU - Byun, Younghun

AU - Eom, Taeyong

AU - Chung, Taek Mo

N1 - Funding Information: This research was supported by a grant from the Development of Smart Chemical Materials for IoT Devices Project (SI2020-20) and the Seed Research Project for future R&D (KK2061-17) through the Korea Research Institute of Chemical Technology and the Development of Novel Ru and Metal precursor for Semiconductor Film Deposition Project (IIT20-04) through the Mecaro Co., Ltd. Publisher Copyright: © The Royal Society of Chemistry 2021.

PY - 2021/3/21

Y1 - 2021/3/21

N2 - Ruthenium (Ru) thin films were grownviaatomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η5-cycloheptadienyl)2(Ru(chd)2) and O2. Self-limiting growth during the Ru ALD process was achieved by varying the Ru precursor and O2feeding times. Metallic Ru films with a low resistivity (10-16 μΩ cm) grew at deposition temperatures between 200 and 300 °C, where the growth per cycle (GPC) during Ru ALD was 0.2 to 0.4 Å cy−1at 265 °C. The Ru incubation times were considerably shorter using the novel precursor (negligible on Pt and TiN, ∼22 cycles on SiO2) compared with those associated with Ru ALD using a high-valency Ru precursor and O2. The characteristics of the Ru film were influenced by the substrate. Specifically, the Pt substrate gave rise to an amorphous film, while crystalline films were grown on the TiN and SiO2substrates, where a high RuOxcontent resulted on the SiO2substrate.

AB - Ruthenium (Ru) thin films were grownviaatomic layer deposition (ALD) using a novel Ru precursor with enhanced reactivity, namely Ru(η5-cycloheptadienyl)2(Ru(chd)2) and O2. Self-limiting growth during the Ru ALD process was achieved by varying the Ru precursor and O2feeding times. Metallic Ru films with a low resistivity (10-16 μΩ cm) grew at deposition temperatures between 200 and 300 °C, where the growth per cycle (GPC) during Ru ALD was 0.2 to 0.4 Å cy−1at 265 °C. The Ru incubation times were considerably shorter using the novel precursor (negligible on Pt and TiN, ∼22 cycles on SiO2) compared with those associated with Ru ALD using a high-valency Ru precursor and O2. The characteristics of the Ru film were influenced by the substrate. Specifically, the Pt substrate gave rise to an amorphous film, while crystalline films were grown on the TiN and SiO2substrates, where a high RuOxcontent resulted on the SiO2substrate.

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Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

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