Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Woo Hee Kim, Il Kwon Oh, Min Kyu Kim, Wan Joo Maeng, Chang Wan Lee, Gyeongho Lee, Clement Lansalot-Matras, Wontae Noh, David Thompson, David Chu, Hyungjun Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O3 and O2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B2O3 films, however, SiO2 layer passivation is required onto the B2O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO2 and B2O3/passivation SiO2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO2 films with different B/(B + Si) compositions were prepared by controlling B2O3 and SiO2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO2 films.

Original languageEnglish
Pages (from-to)5805-5811
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number29
DOIs
Publication statusPublished - 2014 Aug 7

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Atomic layer deposition
Doping (additives)
Thin films
Passivation
Silanes
Boron
Secondary ion mass spectrometry
Leakage currents
Dielectric properties
boron oxide
Moisture
Annealing
Decomposition
Plasmas
Electric potential
Air
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Kim, Woo Hee ; Oh, Il Kwon ; Kim, Min Kyu ; Maeng, Wan Joo ; Lee, Chang Wan ; Lee, Gyeongho ; Lansalot-Matras, Clement ; Noh, Wontae ; Thompson, David ; Chu, David ; Kim, Hyungjun. / Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 29. pp. 5805-5811.
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abstract = "We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O3 and O2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B2O3 films, however, SiO2 layer passivation is required onto the B2O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO2 and B2O3/passivation SiO2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO2 films with different B/(B + Si) compositions were prepared by controlling B2O3 and SiO2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO2 films.",
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Kim, WH, Oh, IK, Kim, MK, Maeng, WJ, Lee, CW, Lee, G, Lansalot-Matras, C, Noh, W, Thompson, D, Chu, D & Kim, H 2014, 'Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process', Journal of Materials Chemistry C, vol. 2, no. 29, pp. 5805-5811. https://doi.org/10.1039/c4tc00648h

Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process. / Kim, Woo Hee; Oh, Il Kwon; Kim, Min Kyu; Maeng, Wan Joo; Lee, Chang Wan; Lee, Gyeongho; Lansalot-Matras, Clement; Noh, Wontae; Thompson, David; Chu, David; Kim, Hyungjun.

In: Journal of Materials Chemistry C, Vol. 2, No. 29, 07.08.2014, p. 5805-5811.

Research output: Contribution to journalArticle

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T1 - Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

AU - Kim, Woo Hee

AU - Oh, Il Kwon

AU - Kim, Min Kyu

AU - Maeng, Wan Joo

AU - Lee, Chang Wan

AU - Lee, Gyeongho

AU - Lansalot-Matras, Clement

AU - Noh, Wontae

AU - Thompson, David

AU - Chu, David

AU - Kim, Hyungjun

PY - 2014/8/7

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N2 - We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O3 and O2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B2O3 films, however, SiO2 layer passivation is required onto the B2O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO2 and B2O3/passivation SiO2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO2 films with different B/(B + Si) compositions were prepared by controlling B2O3 and SiO2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO2 films.

AB - We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O3 and O2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B2O3 films, however, SiO2 layer passivation is required onto the B2O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO2 and B2O3/passivation SiO2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO2 films with different B/(B + Si) compositions were prepared by controlling B2O3 and SiO2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO2 films.

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