TY - JOUR
T1 - Atomic layer deposition of CeO 2 /HfO 2 gate dielectrics on Ge substrate
AU - Maeng, Wan Joo
AU - Oh, Il Kwon
AU - Kim, Woo Hee
AU - Kim, Min Kyu
AU - Lee, Chang Wan
AU - Lansalot-Matras, Clement
AU - Thompson, David
AU - Chu, Schubert
AU - Kim, Hyungjun
N1 - Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2014/12/1
Y1 - 2014/12/1
N2 - We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) 3 ] precursors with H 2 O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO 2 on Ge can form a stable interfacial layer composed of Ge 1+ and Ge 3+ , leading to improved interfacial properties. In addition, Ce-doped HfO 2 films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved.
AB - We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) 3 ] precursors with H 2 O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO 2 on Ge can form a stable interfacial layer composed of Ge 1+ and Ge 3+ , leading to improved interfacial properties. In addition, Ce-doped HfO 2 films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved.
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U2 - 10.1016/j.apsusc.2014.10.025
DO - 10.1016/j.apsusc.2014.10.025
M3 - Article
AN - SCOPUS:84912127910
VL - 321
SP - 214
EP - 218
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -