Atomic layer deposition of CeO                         2                         /HfO                         2                          gate dielectrics on Ge substrate

Wan Joo Maeng; Il Kwon Oh; Woo Hee Kim; Min Kyu Kim; Chang Wan Lee; Clement Lansalot-Matras; David Thompson; Schubert Chu; Hyungjun Kim

doi:10.1016/j.apsusc.2014.10.025

Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate

Wan Joo Maeng, Il Kwon Oh, Woo Hee Kim, Min Kyu Kim, Chang Wan Lee, Clement Lansalot-Matras, David Thompson, Schubert Chu, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We systematically investigated atomic layer deposition (ALD) of HfO ₂ , CeO ₂ and Ce-doped HfO ₂ thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) ₃ ] precursors with H ₂ O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO ₂ on Ge can form a stable interfacial layer composed of Ge ¹⁺ and Ge ³⁺ , leading to improved interfacial properties. In addition, Ce-doped HfO ₂ films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved.

Original language	English
Pages (from-to)	214-218
Number of pages	5
Journal	Applied Surface Science
Volume	321
DOIs	https://doi.org/10.1016/j.apsusc.2014.10.025
Publication status	Published - 2014 Dec 1

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Maeng, W. J., Oh, I. K., Kim, W. H., Kim, M. K., Lee, C. W., Lansalot-Matras, C., Thompson, D., Chu, S., & Kim, H. (2014). Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate Applied Surface Science, 321, 214-218. https://doi.org/10.1016/j.apsusc.2014.10.025

Maeng, Wan Joo ; Oh, Il Kwon ; Kim, Woo Hee ; Kim, Min Kyu ; Lee, Chang Wan ; Lansalot-Matras, Clement ; Thompson, David ; Chu, Schubert ; Kim, Hyungjun. / Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate In: Applied Surface Science. 2014 ; Vol. 321. pp. 214-218.

@article{ff20581dac224ee78c72e3aab2306120,

title = " Atomic layer deposition of CeO 2 /HfO 2 gate dielectrics on Ge substrate ",

abstract = " We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) 3 ] precursors with H 2 O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO 2 on Ge can form a stable interfacial layer composed of Ge 1+ and Ge 3+ , leading to improved interfacial properties. In addition, Ce-doped HfO 2 films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved. ",

author = "Maeng, {Wan Joo} and Oh, {Il Kwon} and Kim, {Woo Hee} and Kim, {Min Kyu} and Lee, {Chang Wan} and Clement Lansalot-Matras and David Thompson and Schubert Chu and Hyungjun Kim",

year = "2014",

month = dec,

day = "1",

doi = "10.1016/j.apsusc.2014.10.025",

language = "English",

volume = "321",

pages = "214--218",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

Maeng, WJ, Oh, IK, Kim, WH, Kim, MK, Lee, CW, Lansalot-Matras, C, Thompson, D, Chu, S & Kim, H 2014, ' Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate ', Applied Surface Science, vol. 321, pp. 214-218. https://doi.org/10.1016/j.apsusc.2014.10.025

Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate . / Maeng, Wan Joo; Oh, Il Kwon; Kim, Woo Hee; Kim, Min Kyu; Lee, Chang Wan; Lansalot-Matras, Clement; Thompson, David; Chu, Schubert; Kim, Hyungjun.

In: Applied Surface Science, Vol. 321, 01.12.2014, p. 214-218.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Atomic layer deposition of CeO 2 /HfO 2 gate dielectrics on Ge substrate

AU - Maeng, Wan Joo

AU - Oh, Il Kwon

AU - Kim, Woo Hee

AU - Kim, Min Kyu

AU - Lee, Chang Wan

AU - Lansalot-Matras, Clement

AU - Thompson, David

AU - Chu, Schubert

AU - Kim, Hyungjun

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) 3 ] precursors with H 2 O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO 2 on Ge can form a stable interfacial layer composed of Ge 1+ and Ge 3+ , leading to improved interfacial properties. In addition, Ce-doped HfO 2 films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved.

AB - We systematically investigated atomic layer deposition (ALD) of HfO 2 , CeO 2 and Ce-doped HfO 2 thin films on Ge substrates by using tetrakis dimethylamino hafnium (TDMAH) and tris(isopropylcyclopentadienyl) cerium [Ce(iPrCp) 3 ] precursors with H 2 O. The growth characteristics, chemical and electrical properties were comparatively characterized. On the basis of X-ray photoemission spectroscopy analyses, it was confirmed that the ALD CeO 2 on Ge can form a stable interfacial layer composed of Ge 1+ and Ge 3+ , leading to improved interfacial properties. In addition, Ce-doped HfO 2 films with various Ce compositions (Ce:Hf = 1:1, 1:2, 1:4 and 1:8) were prepared by an ALD supercycle process on Ge substrates. Thereby, we demonstrated that overall electrical properties including dielectric constant, interface state density, hysteresis and leakage current density are significantly improved.

UR - http://www.scopus.com/inward/record.url?scp=84912127910&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912127910&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2014.10.025

DO - 10.1016/j.apsusc.2014.10.025

M3 - Article

AN - SCOPUS:84912127910

VL - 321

SP - 214

EP - 218

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Maeng WJ, Oh IK, Kim WH, Kim MK, Lee CW, Lansalot-Matras C et al. Atomic layer deposition of CeO ₂ /HfO ₂ gate dielectrics on Ge substrate Applied Surface Science. 2014 Dec 1;321:214-218. https://doi.org/10.1016/j.apsusc.2014.10.025