Atomic layer deposition of Co using N2H2 plasma as a reactant

Jaehong Yoon, Han Bo Ram Lee, Doyoung Kim, Taehoon Cheon, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number11
DOIs
Publication statusPublished - 2011 Oct 18

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Plasmas
X rays
Epitaxial films
Sheet resistance
Photoelectron spectroscopy
Cobalt
Field emission
x ray spectroscopy
gas flow
Flow of gases
field emission
chemical composition
x ray diffraction
cobalt
Diffraction
photoelectron spectroscopy
Transmission electron microscopy
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Yoon, Jaehong ; Lee, Han Bo Ram ; Kim, Doyoung ; Cheon, Taehoon ; Kim, Soo Hyun ; Kim, Hyungjun. / Atomic layer deposition of Co using N2H2 plasma as a reactant. In: Journal of the Electrochemical Society. 2011 ; Vol. 158, No. 11.
@article{430d36a835554ae5acc5f6c5f59bfb79,
title = "Atomic layer deposition of Co using N2H2 plasma as a reactant",
abstract = "Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).",
author = "Jaehong Yoon and Lee, {Han Bo Ram} and Doyoung Kim and Taehoon Cheon and Kim, {Soo Hyun} and Hyungjun Kim",
year = "2011",
month = "10",
day = "18",
doi = "10.1149/2.077111jes",
language = "English",
volume = "158",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

Atomic layer deposition of Co using N2H2 plasma as a reactant. / Yoon, Jaehong; Lee, Han Bo Ram; Kim, Doyoung; Cheon, Taehoon; Kim, Soo Hyun; Kim, Hyungjun.

In: Journal of the Electrochemical Society, Vol. 158, No. 11, 18.10.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition of Co using N2H2 plasma as a reactant

AU - Yoon, Jaehong

AU - Lee, Han Bo Ram

AU - Kim, Doyoung

AU - Cheon, Taehoon

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

PY - 2011/10/18

Y1 - 2011/10/18

N2 - Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).

AB - Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).

UR - http://www.scopus.com/inward/record.url?scp=80054031048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054031048&partnerID=8YFLogxK

U2 - 10.1149/2.077111jes

DO - 10.1149/2.077111jes

M3 - Article

VL - 158

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -