Abstract
Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Oct 18 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Atomic layer deposition of Co using N2H2 plasma as a reactant. / Yoon, Jaehong; Lee, Han Bo Ram; Kim, Doyoung; Cheon, Taehoon; Kim, Soo Hyun; Kim, Hyungjun.
In: Journal of the Electrochemical Society, Vol. 158, No. 11, 18.10.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Atomic layer deposition of Co using N2H2 plasma as a reactant
AU - Yoon, Jaehong
AU - Lee, Han Bo Ram
AU - Kim, Doyoung
AU - Cheon, Taehoon
AU - Kim, Soo Hyun
AU - Kim, Hyungjun
PY - 2011/10/18
Y1 - 2011/10/18
N2 - Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).
AB - Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).
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U2 - 10.1149/2.077111jes
DO - 10.1149/2.077111jes
M3 - Article
VL - 158
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 11
ER -