Abstract
Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).
Original language | English |
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Pages (from-to) | H1179-H1182 |
Journal | Journal of the Electrochemical Society |
Volume | 158 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry