Atomic-layer deposition of crystalline BeO on SiC

Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Weijie Wang, Jae Hyun Ryou, Hyun Seop Kim, Ho Young Cha, Jungwoo Oh

Research output: Contribution to journalArticle

Abstract

For the first time, an epitaxial beryllium oxide (BeO) film was grown on 4H silicon carbide (4H-SiC) by atomic layer deposition (ALD) at a low temperature of 250 °C. The BeO film had a large lattice mismatch with the substrate (>7–8%), but it was successfully grown to a single crystal by domain-matching epitaxy (DME). The bandgap energy, dielectric constant, and thermal conductivity properties of crystalline BeO are suitable for power transistors that require low leakage currents and fast heat dissipation in high electric fields. Physical characterization confirmed the single-crystalline BeO (0 0 2). Raman analysis showed that the E1 and A1 phonon modes of ALD BeO were intermixed with the E2 and A1 phonon modes of SiC, resulting in a significant increase in phonon intensity. After heat treatment at a high temperature, a small amount of SiO2 interfacial oxide was formed but the stoichiometry of BeO was maintained. From the capacitance-voltage (C-V) curves, we obtained a dielectric constant of 6.9 and calculated a low interface trap density of 6 × 1010 cm−2·eV−1 using the Terman method at Ec-Et = 0.6 eV. The high bandgap, thermal conductivity, and excellent crystallinity reduced the dangling bonds at the interface of BeO-on-SiC.

LanguageEnglish
Pages634-640
Number of pages7
JournalApplied Surface Science
Volume469
DOIs
Publication statusPublished - 2019 Mar 1

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Beryllia
Atomic layer deposition
Crystalline materials
Oxide films
Thermal conductivity
Energy gap
Permittivity
Lattice mismatch
Dangling bonds
beryllium oxide
Heat losses
Epitaxial growth
Silicon carbide
Stoichiometry
Leakage currents
Oxides
Capacitance
Heat treatment
Electric fields
Single crystals

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Lee, S. M., Jang, Y., Jung, J., Yum, J. H., Larsen, E. S., Bielawski, C. W., ... Oh, J. (2019). Atomic-layer deposition of crystalline BeO on SiC. Applied Surface Science, 469, 634-640. https://doi.org/10.1016/j.apsusc.2018.09.239
Lee, Seung Min ; Jang, Yoonseo ; Jung, Jongho ; Yum, Jung Hwan ; Larsen, Eric S. ; Bielawski, Christopher W. ; Wang, Weijie ; Ryou, Jae Hyun ; Kim, Hyun Seop ; Cha, Ho Young ; Oh, Jungwoo. / Atomic-layer deposition of crystalline BeO on SiC. In: Applied Surface Science. 2019 ; Vol. 469. pp. 634-640.
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Lee, SM, Jang, Y, Jung, J, Yum, JH, Larsen, ES, Bielawski, CW, Wang, W, Ryou, JH, Kim, HS, Cha, HY & Oh, J 2019, 'Atomic-layer deposition of crystalline BeO on SiC' Applied Surface Science, vol. 469, pp. 634-640. https://doi.org/10.1016/j.apsusc.2018.09.239

Atomic-layer deposition of crystalline BeO on SiC. / Lee, Seung Min; Jang, Yoonseo; Jung, Jongho; Yum, Jung Hwan; Larsen, Eric S.; Bielawski, Christopher W.; Wang, Weijie; Ryou, Jae Hyun; Kim, Hyun Seop; Cha, Ho Young; Oh, Jungwoo.

In: Applied Surface Science, Vol. 469, 01.03.2019, p. 634-640.

Research output: Contribution to journalArticle

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T1 - Atomic-layer deposition of crystalline BeO on SiC

AU - Lee, Seung Min

AU - Jang, Yoonseo

AU - Jung, Jongho

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Bielawski, Christopher W.

AU - Wang, Weijie

AU - Ryou, Jae Hyun

AU - Kim, Hyun Seop

AU - Cha, Ho Young

AU - Oh, Jungwoo

PY - 2019/3/1

Y1 - 2019/3/1

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AB - For the first time, an epitaxial beryllium oxide (BeO) film was grown on 4H silicon carbide (4H-SiC) by atomic layer deposition (ALD) at a low temperature of 250 °C. The BeO film had a large lattice mismatch with the substrate (>7–8%), but it was successfully grown to a single crystal by domain-matching epitaxy (DME). The bandgap energy, dielectric constant, and thermal conductivity properties of crystalline BeO are suitable for power transistors that require low leakage currents and fast heat dissipation in high electric fields. Physical characterization confirmed the single-crystalline BeO (0 0 2). Raman analysis showed that the E1 and A1 phonon modes of ALD BeO were intermixed with the E2 and A1 phonon modes of SiC, resulting in a significant increase in phonon intensity. After heat treatment at a high temperature, a small amount of SiO2 interfacial oxide was formed but the stoichiometry of BeO was maintained. From the capacitance-voltage (C-V) curves, we obtained a dielectric constant of 6.9 and calculated a low interface trap density of 6 × 1010 cm−2·eV−1 using the Terman method at Ec-Et = 0.6 eV. The high bandgap, thermal conductivity, and excellent crystallinity reduced the dangling bonds at the interface of BeO-on-SiC.

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Lee SM, Jang Y, Jung J, Yum JH, Larsen ES, Bielawski CW et al. Atomic-layer deposition of crystalline BeO on SiC. Applied Surface Science. 2019 Mar 1;469:634-640. https://doi.org/10.1016/j.apsusc.2018.09.239