Atomic layer deposition of HfO 2 on graphene through controlled ion beam treatment

Ki Seok Kim, Il Kwon Oh, Hanearl Jung, Hyungjun Kim, Geun Young Yeom, Kyong Nam Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene-HfO 2 -metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 -11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

Original languageEnglish
Article number213102
JournalApplied Physics Letters
Volume108
Issue number21
DOIs
Publication statusPublished - 2016 May 23

Fingerprint

atomic layer epitaxy
graphene
ion beams
capacitors
leakage
polymers
electron mobility
cleaning
ions
causes
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Ki Seok ; Oh, Il Kwon ; Jung, Hanearl ; Kim, Hyungjun ; Yeom, Geun Young ; Kim, Kyong Nam. / Atomic layer deposition of HfO 2 on graphene through controlled ion beam treatment In: Applied Physics Letters. 2016 ; Vol. 108, No. 21.
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Atomic layer deposition of HfO 2 on graphene through controlled ion beam treatment . / Kim, Ki Seok; Oh, Il Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam.

In: Applied Physics Letters, Vol. 108, No. 21, 213102, 23.05.2016.

Research output: Contribution to journalArticle

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