The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.
Bibliographical noteFunding Information:
This research was supported by the Industry Technology R and D program of MOTIE/KEIT [10050501, Development of a laser-assisted hybrid inorganic deposition system for flexible organic device passivation] and the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (2015R1D1A4A01020731).
© 2016 Author(s).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)