HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.
Bibliographical noteFunding Information:
The authors thank Mr. Jung Han Lee at the University of Science and Technology and Dr. Yeonjin Yi at the Korea Research Institute of Standards and Science for providing the MEIS measurement data used in this study. This work was supported by the System IC 2010 Project of the Korea Ministry of Knowledge Economy .
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry