Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

Kibyung Park, Younghwan Lee, Kyung Taek Im, June Young Lee, Sangwoo Lim

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4 Citations (Scopus)


HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.

Original languageEnglish
Pages (from-to)4126-4130
Number of pages5
JournalThin Solid Films
Issue number15
Publication statusPublished - 2010 May 31

Bibliographical note

Funding Information:
The authors thank Mr. Jung Han Lee at the University of Science and Technology and Dr. Yeonjin Yi at the Korea Research Institute of Standards and Science for providing the MEIS measurement data used in this study. This work was supported by the System IC 2010 Project of the Korea Ministry of Knowledge Economy .

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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