Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces

Kibyung Park, Younghwan Lee, Kyung Taek Im, June Young Lee, Sangwoo Lim

Research output: Contribution to journalArticle

3 Citations (Scopus)


HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer.

Original languageEnglish
Pages (from-to)4126-4130
Number of pages5
JournalThin Solid Films
Issue number15
Publication statusPublished - 2010 May 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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