Atomic layer deposition of HfO                         2                          thin films using H                          2                         O                         2                          as oxidant

Min Jung Choi; Hyung Ho Park; Doo Seok Jeong; Jeong Hwan Kim; Jin Sang Kim; Seong Keun Kim

doi:10.1016/j.apsusc.2014.02.098

Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant

Min Jung Choi, Hyung Ho Park, Doo Seok Jeong, Jeong Hwan Kim, Jin Sang Kim, Seong Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

HfO ₂ films were deposited by atomic layer deposition (ALD) using Hf[(C ₂ H ₅ )(CH ₃ )N] ₄ and H ₂ O ₂ at a temperature range of 175-325 °C. The growth per cycle of the HfO ₂ films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO ₂ films grown with H ₂ O ₂ exhibited slightly higher carbon contents than those grown with H ₂ O, the leakage properties of the HfO ₂ films grown with H ₂ O ₂ were superior to those of the HfO ₂ films grown with H ₂ O. This is because the HfO ₂ films grown with H ₂ O ₂ were fully oxidized as a result of the strong oxidation potential of H ₂ O ₂ . The use of the ALD process with H ₂ O ₂ also revealed the conformal growth of HfO ₂ films on a SiO ₂ hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H ₂ O ₂ shows great promise for growing robust HfO ₂ films.

Original language	English
Pages (from-to)	451-455
Number of pages	5
Journal	Applied Surface Science
Volume	301
DOIs	https://doi.org/10.1016/j.apsusc.2014.02.098
Publication status	Published - 2014 May 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Choi, M. J., Park, H. H., Jeong, D. S., Kim, J. H., Kim, J. S., & Kim, S. K. (2014). Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant Applied Surface Science, 301, 451-455. https://doi.org/10.1016/j.apsusc.2014.02.098

Choi, Min Jung ; Park, Hyung Ho ; Jeong, Doo Seok ; Kim, Jeong Hwan ; Kim, Jin Sang ; Kim, Seong Keun. / Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant In: Applied Surface Science. 2014 ; Vol. 301. pp. 451-455.

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title = " Atomic layer deposition of HfO 2 thin films using H 2 O 2 as oxidant ",

abstract = " HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.",

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Choi, MJ, Park, HH, Jeong, DS, Kim, JH, Kim, JS & Kim, SK 2014, ' Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant ', Applied Surface Science, vol. 301, pp. 451-455. https://doi.org/10.1016/j.apsusc.2014.02.098

Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant . / Choi, Min Jung; Park, Hyung Ho; Jeong, Doo Seok; Kim, Jeong Hwan; Kim, Jin Sang; Kim, Seong Keun.

In: Applied Surface Science, Vol. 301, 15.05.2014, p. 451-455.

Research output: Contribution to journal › Article

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AU - Kim, Seong Keun

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N2 - HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.

AB - HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.

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Choi MJ, Park HH, Jeong DS, Kim JH, Kim JS, Kim SK. Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant Applied Surface Science. 2014 May 15;301:451-455. https://doi.org/10.1016/j.apsusc.2014.02.098