Atomic layer deposition of HfO 2 thin films using H 2 O 2 as oxidant

Min Jung Choi, Hyung Ho Park, Doo Seok Jeong, Jeong Hwan Kim, Jin Sang Kim, Seong Keun Kim

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12 Citations (Scopus)


HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.

Original languageEnglish
Pages (from-to)451-455
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2014 May 15

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program ( 10047231 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E24001 ).

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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