Atomic layer deposition of HfO                         2                          thin films using H                          2                         O                         2                          as oxidant

Min Jung Choi; Hyung Ho Park; Doo Seok Jeong; Jeong Hwan Kim; Jin Sang Kim; Seong Keun Kim

doi:10.1016/j.apsusc.2014.02.098

Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant

Min Jung Choi, Hyung Ho Park, Doo Seok Jeong, Jeong Hwan Kim, Jin Sang Kim, Seong Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

HfO ₂ films were deposited by atomic layer deposition (ALD) using Hf[(C ₂ H ₅ )(CH ₃ )N] ₄ and H ₂ O ₂ at a temperature range of 175-325 °C. The growth per cycle of the HfO ₂ films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO ₂ films grown with H ₂ O ₂ exhibited slightly higher carbon contents than those grown with H ₂ O, the leakage properties of the HfO ₂ films grown with H ₂ O ₂ were superior to those of the HfO ₂ films grown with H ₂ O. This is because the HfO ₂ films grown with H ₂ O ₂ were fully oxidized as a result of the strong oxidation potential of H ₂ O ₂ . The use of the ALD process with H ₂ O ₂ also revealed the conformal growth of HfO ₂ films on a SiO ₂ hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H ₂ O ₂ shows great promise for growing robust HfO ₂ films.

Original language	English
Pages (from-to)	451-455
Number of pages	5
Journal	Applied Surface Science
Volume	301
DOIs	https://doi.org/10.1016/j.apsusc.2014.02.098
Publication status	Published - 2014 May 15

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program ( 10047231 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E24001 ).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2014.02.098

Cite this

Choi, M. J., Park, H. H., Jeong, D. S., Kim, J. H., Kim, J. S., & Kim, S. K. (2014). Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant Applied Surface Science, 301, 451-455. https://doi.org/10.1016/j.apsusc.2014.02.098

Choi, Min Jung ; Park, Hyung Ho ; Jeong, Doo Seok ; Kim, Jeong Hwan ; Kim, Jin Sang ; Kim, Seong Keun. / Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant In: Applied Surface Science. 2014 ; Vol. 301. pp. 451-455.

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title = " Atomic layer deposition of HfO 2 thin films using H 2 O 2 as oxidant ",

abstract = " HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.",

author = "Choi, {Min Jung} and Park, {Hyung Ho} and Jeong, {Doo Seok} and Kim, {Jeong Hwan} and Kim, {Jin Sang} and Kim, {Seong Keun}",

note = "Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program ( 10047231 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E24001 ).",

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Choi, MJ, Park, HH, Jeong, DS, Kim, JH, Kim, JS & Kim, SK 2014, ' Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant ', Applied Surface Science, vol. 301, pp. 451-455. https://doi.org/10.1016/j.apsusc.2014.02.098

Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant . / Choi, Min Jung; Park, Hyung Ho; Jeong, Doo Seok; Kim, Jeong Hwan; Kim, Jin Sang; Kim, Seong Keun.

In: Applied Surface Science, Vol. 301, 15.05.2014, p. 451-455.

Research output: Contribution to journal › Article › peer-review

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AU - Kim, Jin Sang

AU - Kim, Seong Keun

N1 - Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program ( 10047231 ) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E24001 ).

PY - 2014/5/15

Y1 - 2014/5/15

N2 - HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.

AB - HfO 2 films were deposited by atomic layer deposition (ALD) using Hf[(C 2 H 5 )(CH 3 )N] 4 and H 2 O 2 at a temperature range of 175-325 °C. The growth per cycle of the HfO 2 films decreased with increasing temperature up to 280 °C and then abruptly increased above 325 °C as a result of the thermal decomposition of the precursor. Although the HfO 2 films grown with H 2 O 2 exhibited slightly higher carbon contents than those grown with H 2 O, the leakage properties of the HfO 2 films grown with H 2 O 2 were superior to those of the HfO 2 films grown with H 2 O. This is because the HfO 2 films grown with H 2 O 2 were fully oxidized as a result of the strong oxidation potential of H 2 O 2 . The use of the ALD process with H 2 O 2 also revealed the conformal growth of HfO 2 films on a SiO 2 hole structure with an aspect ratio of ∼15. This demonstrates that using the ALD process with H 2 O 2 shows great promise for growing robust HfO 2 films.

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Choi MJ, Park HH, Jeong DS, Kim JH, Kim JS, Kim SK. Atomic layer deposition of HfO ₂ thin films using H ₂ O ₂ as oxidant Applied Surface Science. 2014 May 15;301:451-455. https://doi.org/10.1016/j.apsusc.2014.02.098