Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3

Soo Hyun Kim, Jun Ki Kim, Nohjung Kwak, Hyunchul Sohn, Jinwoong Kim, Sung Hoon Jung, Mi Ran Hong, Sang Hyeob Lee, Josh Collins

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25 Citations (Scopus)

Abstract

Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.

Original languageEnglish
Pages (from-to)C54-C57
JournalElectrochemical and Solid-State Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2006 Jan 27

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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