Abstract
Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.
Original language | English |
---|---|
Pages (from-to) | C54-C57 |
Journal | Electrochemical and Solid-State Letters |
Volume | 9 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering