Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B 2 H 6 , WF 6 , and NH 3

Soo Hyun Kim, Jun Ki Kim, Nohjung Kwak, Hyunchul Sohn, Jinwoong Kim, Sung Hoon Jung, Mi Ran Hong, Sang Hyeob Lee, Josh Collins

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2006 Jan 27

Fingerprint

Tungsten
Atomic layer deposition
atomic layer epitaxy
Nitrides
nitrides
tungsten
Thin films
electrical resistivity
thin films
X ray diffraction analysis
Film thickness
aspect ratio
Aspect ratio
electric contacts
film thickness
cycles
x rays

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Soo Hyun ; Kim, Jun Ki ; Kwak, Nohjung ; Sohn, Hyunchul ; Kim, Jinwoong ; Jung, Sung Hoon ; Hong, Mi Ran ; Lee, Sang Hyeob ; Collins, Josh. / Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B 2 H 6 , WF 6 , and NH 3 In: Electrochemical and Solid-State Letters. 2006 ; Vol. 9, No. 3.
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Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B 2 H 6 , WF 6 , and NH 3 . / Kim, Soo Hyun; Kim, Jun Ki; Kwak, Nohjung; Sohn, Hyunchul; Kim, Jinwoong; Jung, Sung Hoon; Hong, Mi Ran; Lee, Sang Hyeob; Collins, Josh.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 3, 27.01.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B 2 H 6 , WF 6 , and NH 3

AU - Kim, Soo Hyun

AU - Kim, Jun Ki

AU - Kwak, Nohjung

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Jung, Sung Hoon

AU - Hong, Mi Ran

AU - Lee, Sang Hyeob

AU - Collins, Josh

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