Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3

Soo Hyun Kim; Jun Ki Kim; Nohjung Kwak; Hyunchul Sohn; Jinwoong Kim; Sung Hoon Jung; Mi Ran Hong; Sang Hyeob Lee; Josh Collins

doi:10.1149/1.2161451

Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B₂H₆, WF₆, and NH ₃

Soo Hyun Kim, Jun Ki Kim, Nohjung Kwak, Hyunchul Sohn, Jinwoong Kim, Sung Hoon Jung, Mi Ran Hong, Sang Hyeob Lee, Josh Collins

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.

Original language	English
Pages (from-to)	C54-C57
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/1.2161451
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2161451

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title = "Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3",

abstract = "Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.",

author = "Kim, {Soo Hyun} and Kim, {Jun Ki} and Nohjung Kwak and Hyunchul Sohn and Jinwoong Kim and Jung, {Sung Hoon} and Hong, {Mi Ran} and Lee, {Sang Hyeob} and Josh Collins",

year = "2006",

doi = "10.1149/1.2161451",

language = "English",

volume = "9",

pages = "C54--C57",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "3",

}

Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B₂H₆, WF₆, and NH ₃. / Kim, Soo Hyun; Kim, Jun Ki; Kwak, Nohjung; Sohn, Hyunchul; Kim, Jinwoong; Jung, Sung Hoon; Hong, Mi Ran; Lee, Sang Hyeob; Collins, Josh.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 3, 2006, p. C54-C57.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3

AU - Kim, Soo Hyun

AU - Kim, Jun Ki

AU - Kwak, Nohjung

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Jung, Sung Hoon

AU - Hong, Mi Ran

AU - Lee, Sang Hyeob

AU - Collins, Josh

PY - 2006

Y1 - 2006

N2 - Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.

AB - Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.

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Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B₂H₆, WF₆, and NH ₃

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