Abstract
Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.
| Original language | English |
|---|---|
| Pages (from-to) | C54-C57 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 Jan 27 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3. / Kim, Soo Hyun; Kim, Jun Ki; Kwak, Nohjung; Sohn, Hyunchul; Kim, Jinwoong; Jung, Sung Hoon; Hong, Mi Ran; Lee, Sang Hyeob; Collins, Josh.
In: Electrochemical and Solid-State Letters, Vol. 9, No. 3, 27.01.2006, p. C54-C57.Research output: Contribution to journal › Article
TY - JOUR
T1 - Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3
AU - Kim, Soo Hyun
AU - Kim, Jun Ki
AU - Kwak, Nohjung
AU - Sohn, Hyunchul
AU - Kim, Jinwoong
AU - Jung, Sung Hoon
AU - Hong, Mi Ran
AU - Lee, Sang Hyeob
AU - Collins, Josh
PY - 2006/1/27
Y1 - 2006/1/27
N2 - Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.
AB - Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2 H6, WF6, and NH3 at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was ∼0.28 nmcycle with B2 H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of ∼350 μΩ cm with a metallic W-N bond and density of ∼15 g cm3 at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with Β- W2 N and δ -WN phase. Step coverage was approximately 100% even on the 0.14 μm diameter contact hole with a 16:1 aspect ratio.
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U2 - 10.1149/1.2161451
DO - 10.1149/1.2161451
M3 - Article
AN - SCOPUS:31044432920
VL - 9
SP - C54-C57
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 3
ER -