Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

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Atomic layer deposition (ALD) of metal and nitride thin films and their applications in modern semiconductor device fabrications are reviewed. The ALD process consists of metal precursor exposure, purging of precursors from the chamber, exposure of the other reactant species, and the evacuation of the reactant molecules from the chamber. The growth rate of ALD process when plotted as a function of temperature shows an increase at low temperature ranges, is constant over a temperature range which is called the 'ALD process window', and shows an increase at higher temperatures. ALD is still in early development stage and many technical issues need to be resolved.

Original languageEnglish
Pages (from-to)2231-2261
Number of pages31
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2003 Nov 1


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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