Atomic layer deposition (ALD) of metal and nitride thin films and their applications in modern semiconductor device fabrications are reviewed. The ALD process consists of metal precursor exposure, purging of precursors from the chamber, exposure of the other reactant species, and the evacuation of the reactant molecules from the chamber. The growth rate of ALD process when plotted as a function of temperature shows an increase at low temperature ranges, is constant over a temperature range which is called the 'ALD process window', and shows an increase at higher temperatures. ALD is still in early development stage and many technical issues need to be resolved.
|Number of pages||31|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Nov 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering