Atomic layer deposition of Ni thin films and application to area-selective deposition

Woo Hee Kim, Han Bo Ram Lee, Kwang Heo, Young Kuk Lee, Taek Mo Chung, Chang Gyoun Kim, Seunghun Hong, Jong Heo, Hyungjun Kim

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni (dmamb)2] as a precursor and N H3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and Si O2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 μm width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition.

Original languageEnglish
Pages (from-to)D1-D5
JournalJournal of the Electrochemical Society
Volume158
Issue number1
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Atomic layer deposition
Thin films
Self assembled monolayers
Substrates
Nickel
Nanowires
Nitrogen
Carbon
Gases
Oxygen
octadecyltrichlorosilane

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kim, Woo Hee ; Lee, Han Bo Ram ; Heo, Kwang ; Lee, Young Kuk ; Chung, Taek Mo ; Kim, Chang Gyoun ; Hong, Seunghun ; Heo, Jong ; Kim, Hyungjun. / Atomic layer deposition of Ni thin films and application to area-selective deposition. In: Journal of the Electrochemical Society. 2011 ; Vol. 158, No. 1. pp. D1-D5.
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Kim, WH, Lee, HBR, Heo, K, Lee, YK, Chung, TM, Kim, CG, Hong, S, Heo, J & Kim, H 2011, 'Atomic layer deposition of Ni thin films and application to area-selective deposition', Journal of the Electrochemical Society, vol. 158, no. 1, pp. D1-D5. https://doi.org/10.1149/1.3504196

Atomic layer deposition of Ni thin films and application to area-selective deposition. / Kim, Woo Hee; Lee, Han Bo Ram; Heo, Kwang; Lee, Young Kuk; Chung, Taek Mo; Kim, Chang Gyoun; Hong, Seunghun; Heo, Jong; Kim, Hyungjun.

In: Journal of the Electrochemical Society, Vol. 158, No. 1, 01.03.2011, p. D1-D5.

Research output: Contribution to journalArticle

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