Atomic layer deposition of PbTiO3 and its component oxide films

Hyun Ju Lee, Gyu Weon Hwang, Keun Lee, Gun Hwan Kim, Cheol Seong Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition of ferroelectric PbTiO3 (PTO) thin films and its component oxide films were attempted using the Pb(DMAMP)2 and Ti(Oi-Pr)4 or Ti(Ot-Bu)4, as the Pb- and Ti-precursors, respectively, and H2O as oxidant at a wafer temperature of 200 on Ir/IrO2/SiO2/Si substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and TiO2 cycles. The increase of the PTO film growth rate due to the cayalytic effect was observed compared to its component oxide films for both processes using Ti(Oi-Pr)4 or Ti(Ot-Bu)4. The as-deposited PTO film was amorphous so that two different post-deposition annealing method, i.e. slow and fast furnace annealing at 600 were used to crystallize PTO film. The higher growth rate of PTO film grown using Ti(Oi-Pr)4 due to the higher growth rate of TiO2 film compared to the case using Ti(Ot-Bu)4 resulted in less dense PTO film with the higher density of micro-pores inside as well as surface of film after the fast furnace annealing. Slow furnace annealing improved the surface morphology of PTO film and reduced the micro-pore density. Post-deposition annealing transformed amorphous film to polycrystalline film of perovskite sturcure with an a-axis preferred crystallographic orientation.

Original languageEnglish
Title of host publication2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages152-155
Number of pages4
DOIs
Publication statusPublished - 2007
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Conference

Conference2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/TerritoryJapan
CityNara-city
Period07/5/2707/5/31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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