Atomic layer deposition of Ru thin films using a Ru(0) metallorganic precursor and O2

Tae Eun Hong, Sang Hyeok Choi, Seungmin Yeo, Ji Yoon Park, Soo Hyun Kim, Taehoon Cheon, Hoon Kim, Min Kyu Kim, Hyungjun Kim

Research output: Contribution to journalArticle

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Abstract

Ruthenium (Ru) thin filmswere grown on thermally-grown SiO2 substrate using atomic layer deposition (ALD) by a sequential supply of a zero-valent metallorganic precursor, (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru(0) (EBECHRu, C16H22Ru), and molecular oxygen (O 2) between 140 and 350°C while the typical temperature was 225°C. A self-limiting film growth was confirmed at the deposition temperature of 225°C and the growth rate was∼0.042 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 3 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.67 × 1012/cm2 was obtained after 7 ALD cycles. A continuous Ru film with a thickness of ∼2.3 nm was formed after 60 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity and microstructure, and the minimum resistivity of ∼14 μ-cm was obtained at the deposition temperature of 350°C. The step coverage of the film deposited between 225 and 270°C was approximately 100% over the contact holes (bottom diameter: 0.065 μm) with a high aspect ratio (32:1). Finally, the ALD-Ru film was successfully evaluated in terms of its performance as a seed layer for Cu electroplating and as a bottom electrode for a metal-insulator-metal capacitor using an ALD-TiO2 single layer or an ALD HfO2/La 2O3/HfO2 multilayer as a dielectric.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number3
DOIs
Publication statusPublished - 2013 Nov 18

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Ruthenium
Atomic layer deposition
Thin films
Metals
Temperature
Molecular oxygen
Electroplating
Film growth
Substrates
Seed
Aspect ratio
Multilayers
Capacitors
Nucleation
Transmission electron microscopy
Microstructure
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Hong, Tae Eun ; Choi, Sang Hyeok ; Yeo, Seungmin ; Park, Ji Yoon ; Kim, Soo Hyun ; Cheon, Taehoon ; Kim, Hoon ; Kim, Min Kyu ; Kim, Hyungjun. / Atomic layer deposition of Ru thin films using a Ru(0) metallorganic precursor and O2. In: ECS Journal of Solid State Science and Technology. 2013 ; Vol. 2, No. 3.
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abstract = "Ruthenium (Ru) thin filmswere grown on thermally-grown SiO2 substrate using atomic layer deposition (ALD) by a sequential supply of a zero-valent metallorganic precursor, (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru(0) (EBECHRu, C16H22Ru), and molecular oxygen (O 2) between 140 and 350°C while the typical temperature was 225°C. A self-limiting film growth was confirmed at the deposition temperature of 225°C and the growth rate was∼0.042 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 3 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.67 × 1012/cm2 was obtained after 7 ALD cycles. A continuous Ru film with a thickness of ∼2.3 nm was formed after 60 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity and microstructure, and the minimum resistivity of ∼14 μ-cm was obtained at the deposition temperature of 350°C. The step coverage of the film deposited between 225 and 270°C was approximately 100{\%} over the contact holes (bottom diameter: 0.065 μm) with a high aspect ratio (32:1). Finally, the ALD-Ru film was successfully evaluated in terms of its performance as a seed layer for Cu electroplating and as a bottom electrode for a metal-insulator-metal capacitor using an ALD-TiO2 single layer or an ALD HfO2/La 2O3/HfO2 multilayer as a dielectric.",
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Atomic layer deposition of Ru thin films using a Ru(0) metallorganic precursor and O2. / Hong, Tae Eun; Choi, Sang Hyeok; Yeo, Seungmin; Park, Ji Yoon; Kim, Soo Hyun; Cheon, Taehoon; Kim, Hoon; Kim, Min Kyu; Kim, Hyungjun.

In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 3, 18.11.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition of Ru thin films using a Ru(0) metallorganic precursor and O2

AU - Hong, Tae Eun

AU - Choi, Sang Hyeok

AU - Yeo, Seungmin

AU - Park, Ji Yoon

AU - Kim, Soo Hyun

AU - Cheon, Taehoon

AU - Kim, Hoon

AU - Kim, Min Kyu

AU - Kim, Hyungjun

PY - 2013/11/18

Y1 - 2013/11/18

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