Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas

Woo Hee Kim, Sang Joon Park, Do Young Kim, Hyungjun Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).

Original languageEnglish
Pages (from-to)32-37
Number of pages6
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

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atomic layer epitaxy
ruthenium
oxides
oxygen
thin films
gases
chemical composition
x rays
flow velocity
photoelectron spectroscopy
electrical resistivity
temperature
diffraction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).",
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Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas. / Kim, Woo Hee; Park, Sang Joon; Kim, Do Young; Kim, Hyungjun.

In: Journal of the Korean Physical Society, Vol. 55, No. 1, 01.07.2009, p. 32-37.

Research output: Contribution to journalArticle

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AB - In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).

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