Atomic layer deposition of Ta-based thin films

Reactions of alkylamide precursor with various reactants

W. J. Maeng, Sang Joon Park, Hyungjun Kim

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

Original languageEnglish
Pages (from-to)2276-2281
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number5
DOIs
Publication statusPublished - 2006 Oct 9

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Plasmas
Thin films
thin films
Nitrogen
nitrogen
oxygen plasma
hydrogen plasma
Water
water
Hydrogen
Carbon
Oxygen
carbon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.",
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N2 - The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

AB - The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

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