Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility

Do Joong Lee, Ki Ju Kim, Soo Hyun Kim, Jang Yeon Kwon, Jimmy Xu, Ki Bum Kim

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm−1, nearly twice that of AZO films (591 S cm−1), thanks to the high doping efficiency of Ti (41%) and its extraordinary high mobility (>20 cm2 V−1 s−1). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.

Original languageEnglish
Pages (from-to)4761-4769
Number of pages9
JournalJournal of Materials Chemistry C
Volume1
Issue number31
DOIs
Publication statusPublished - 2013 Jul 18

Fingerprint

Atomic layer deposition
Electron mobility
Doping (additives)
Film growth
Titanium
Structural properties
Electric properties
Optical properties
Scattering
Adsorption
Electrodes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Lee, Do Joong ; Kim, Ki Ju ; Kim, Soo Hyun ; Kwon, Jang Yeon ; Xu, Jimmy ; Kim, Ki Bum. / Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility. In: Journal of Materials Chemistry C. 2013 ; Vol. 1, No. 31. pp. 4761-4769.
@article{3858c8b4c9604fbe97ab62bfdca1bfa0,
title = "Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility",
abstract = "Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm−1, nearly twice that of AZO films (591 S cm−1), thanks to the high doping efficiency of Ti (41{\%}) and its extraordinary high mobility (>20 cm2 V−1 s−1). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.",
author = "Lee, {Do Joong} and Kim, {Ki Ju} and Kim, {Soo Hyun} and Kwon, {Jang Yeon} and Jimmy Xu and Kim, {Ki Bum}",
year = "2013",
month = "7",
day = "18",
doi = "10.1039/c3tc30469h",
language = "English",
volume = "1",
pages = "4761--4769",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "31",

}

Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility. / Lee, Do Joong; Kim, Ki Ju; Kim, Soo Hyun; Kwon, Jang Yeon; Xu, Jimmy; Kim, Ki Bum.

In: Journal of Materials Chemistry C, Vol. 1, No. 31, 18.07.2013, p. 4761-4769.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility

AU - Lee, Do Joong

AU - Kim, Ki Ju

AU - Kim, Soo Hyun

AU - Kwon, Jang Yeon

AU - Xu, Jimmy

AU - Kim, Ki Bum

PY - 2013/7/18

Y1 - 2013/7/18

N2 - Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm−1, nearly twice that of AZO films (591 S cm−1), thanks to the high doping efficiency of Ti (41%) and its extraordinary high mobility (>20 cm2 V−1 s−1). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.

AB - Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm−1, nearly twice that of AZO films (591 S cm−1), thanks to the high doping efficiency of Ti (41%) and its extraordinary high mobility (>20 cm2 V−1 s−1). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.

UR - http://www.scopus.com/inward/record.url?scp=84892569675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892569675&partnerID=8YFLogxK

U2 - 10.1039/c3tc30469h

DO - 10.1039/c3tc30469h

M3 - Article

AN - SCOPUS:84892569675

VL - 1

SP - 4761

EP - 4769

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 31

ER -