Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation

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Abstract

The atomic layer deposition (ALD) is a promising thin film deposition technique in the fabrication of nanoscale semiconductors devices. In this paper, the results on the ALD of transition metals are reviewed for their applications as silicide contact of nanoscale semiconductor devices, especially focusing on the growth characteristics of ALD Co (and Ni) and comparison between plasma-enhanced ALD (PE-ALD) and thermal ALD (TH-ALD). For most of metal organic precursors, NH 3 plasma is a good choice as a reactant to produce highly pure Co or Ni films, while H 2 or N 2 plasma does not produce high quality film. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 μΩ cm. Relatively good quality metal film formation by thermal ALD was possible by limited range of precursors including Co(iPr-AMD) 2 . Even for these precursors, the resistivity and other film properties were inferior to those of PE-ALD films. However, for PE-ALD using NH 3 plasma, the conformality was not good enough for high aspect ratio nanoscale via structures, which necessitates the development of thermal ALD process. The formation of silicide by rapid thermal annealing of ALD Co thin films was also investigated showing different behavior for PE- and TH-ALD Co thin films.

Original languageEnglish
Pages (from-to)69-75
Number of pages7
JournalMicroelectronic Engineering
Volume106
DOIs
Publication statusPublished - 2013 Jun 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Transition metals
transition metals
Plasmas
Semiconductor devices
semiconductor devices
Thin films
thin films
Metals
electrical resistivity
Rapid thermal annealing
high aspect ratio
metal films
Aspect ratio
Fabrication
fabrication
annealing
Hot Temperature
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation",
abstract = "The atomic layer deposition (ALD) is a promising thin film deposition technique in the fabrication of nanoscale semiconductors devices. In this paper, the results on the ALD of transition metals are reviewed for their applications as silicide contact of nanoscale semiconductor devices, especially focusing on the growth characteristics of ALD Co (and Ni) and comparison between plasma-enhanced ALD (PE-ALD) and thermal ALD (TH-ALD). For most of metal organic precursors, NH 3 plasma is a good choice as a reactant to produce highly pure Co or Ni films, while H 2 or N 2 plasma does not produce high quality film. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 μΩ cm. Relatively good quality metal film formation by thermal ALD was possible by limited range of precursors including Co(iPr-AMD) 2 . Even for these precursors, the resistivity and other film properties were inferior to those of PE-ALD films. However, for PE-ALD using NH 3 plasma, the conformality was not good enough for high aspect ratio nanoscale via structures, which necessitates the development of thermal ALD process. The formation of silicide by rapid thermal annealing of ALD Co thin films was also investigated showing different behavior for PE- and TH-ALD Co thin films.",
author = "Hyungjun Kim",
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AB - The atomic layer deposition (ALD) is a promising thin film deposition technique in the fabrication of nanoscale semiconductors devices. In this paper, the results on the ALD of transition metals are reviewed for their applications as silicide contact of nanoscale semiconductor devices, especially focusing on the growth characteristics of ALD Co (and Ni) and comparison between plasma-enhanced ALD (PE-ALD) and thermal ALD (TH-ALD). For most of metal organic precursors, NH 3 plasma is a good choice as a reactant to produce highly pure Co or Ni films, while H 2 or N 2 plasma does not produce high quality film. At optimal conditions, highly pure Co films were deposited with low resistivity down to 10 μΩ cm. Relatively good quality metal film formation by thermal ALD was possible by limited range of precursors including Co(iPr-AMD) 2 . Even for these precursors, the resistivity and other film properties were inferior to those of PE-ALD films. However, for PE-ALD using NH 3 plasma, the conformality was not good enough for high aspect ratio nanoscale via structures, which necessitates the development of thermal ALD process. The formation of silicide by rapid thermal annealing of ALD Co thin films was also investigated showing different behavior for PE- and TH-ALD Co thin films.

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