Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors

Bo Eun Park, Il Kwon Oh, Chandreswar Mahata, Chang Wan Lee, David Thompson, Han Bo Ram Lee, Wan Joo Maeng, Hyungjun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

With accelerated shrinking of integrated circuit, the fabrication of metal-insulator-metal (MIM) capacitors having a high capacitance density and low leakage current for dynamic random access memory (DRAM) has become a challenge. In this study, we investigated Y-stabilized ZrO2 as a novel high-k material for DRAM capacitors. We used atomic layer deposition (ALD) to produce Y-stabilized ZrO2; this technique enables easy control of the Y concentration by changing the ratio of ZrO2 to Y2O3 ALD cycles. This technique is suitable for future DRAM capacitors, as it provides superior thickness controllability and conformality. Y doping into ZrO2 increases the oxygen vacancy content in the films and transforms the ZrO2 crystal structure from monoclinic to cubic. As a result, the dielectric constant is significantly increased from 19.1 to 30.2. Moreover, Y doping shifts the defect level into the conduction band rather than the energy bandgap, resulting in about 60 times lower leakage current density for Y-doped ZrO2 compared to undoped ZrO2. It is notable that the dielectric properties and the leakage current density are simultaneously enhanced, indicating that Y-doped ZrO2 is a promising candidate to satisfy the requirements of future DRAM capacitors.

Original languageEnglish
Pages (from-to)307-312
Number of pages6
JournalJournal of Alloys and Compounds
Volume722
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Atomic layer deposition
Capacitors
Leakage currents
Data storage equipment
Current density
Metals
Doping (additives)
Oxygen vacancies
Conduction bands
Controllability
Dielectric properties
Integrated circuits
Energy gap
Permittivity
Capacitance
Crystal structure
Fabrication
Defects

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Park, Bo Eun ; Oh, Il Kwon ; Mahata, Chandreswar ; Lee, Chang Wan ; Thompson, David ; Lee, Han Bo Ram ; Maeng, Wan Joo ; Kim, Hyungjun. / Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors. In: Journal of Alloys and Compounds. 2017 ; Vol. 722. pp. 307-312.
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abstract = "With accelerated shrinking of integrated circuit, the fabrication of metal-insulator-metal (MIM) capacitors having a high capacitance density and low leakage current for dynamic random access memory (DRAM) has become a challenge. In this study, we investigated Y-stabilized ZrO2 as a novel high-k material for DRAM capacitors. We used atomic layer deposition (ALD) to produce Y-stabilized ZrO2; this technique enables easy control of the Y concentration by changing the ratio of ZrO2 to Y2O3 ALD cycles. This technique is suitable for future DRAM capacitors, as it provides superior thickness controllability and conformality. Y doping into ZrO2 increases the oxygen vacancy content in the films and transforms the ZrO2 crystal structure from monoclinic to cubic. As a result, the dielectric constant is significantly increased from 19.1 to 30.2. Moreover, Y doping shifts the defect level into the conduction band rather than the energy bandgap, resulting in about 60 times lower leakage current density for Y-doped ZrO2 compared to undoped ZrO2. It is notable that the dielectric properties and the leakage current density are simultaneously enhanced, indicating that Y-doped ZrO2 is a promising candidate to satisfy the requirements of future DRAM capacitors.",
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Park, BE, Oh, IK, Mahata, C, Lee, CW, Thompson, D, Lee, HBR, Maeng, WJ & Kim, H 2017, 'Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors', Journal of Alloys and Compounds, vol. 722, pp. 307-312. https://doi.org/10.1016/j.jallcom.2017.06.036

Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors. / Park, Bo Eun; Oh, Il Kwon; Mahata, Chandreswar; Lee, Chang Wan; Thompson, David; Lee, Han Bo Ram; Maeng, Wan Joo; Kim, Hyungjun.

In: Journal of Alloys and Compounds, Vol. 722, 01.01.2017, p. 307-312.

Research output: Contribution to journalArticle

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T1 - Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors

AU - Park, Bo Eun

AU - Oh, Il Kwon

AU - Mahata, Chandreswar

AU - Lee, Chang Wan

AU - Thompson, David

AU - Lee, Han Bo Ram

AU - Maeng, Wan Joo

AU - Kim, Hyungjun

PY - 2017/1/1

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AB - With accelerated shrinking of integrated circuit, the fabrication of metal-insulator-metal (MIM) capacitors having a high capacitance density and low leakage current for dynamic random access memory (DRAM) has become a challenge. In this study, we investigated Y-stabilized ZrO2 as a novel high-k material for DRAM capacitors. We used atomic layer deposition (ALD) to produce Y-stabilized ZrO2; this technique enables easy control of the Y concentration by changing the ratio of ZrO2 to Y2O3 ALD cycles. This technique is suitable for future DRAM capacitors, as it provides superior thickness controllability and conformality. Y doping into ZrO2 increases the oxygen vacancy content in the films and transforms the ZrO2 crystal structure from monoclinic to cubic. As a result, the dielectric constant is significantly increased from 19.1 to 30.2. Moreover, Y doping shifts the defect level into the conduction band rather than the energy bandgap, resulting in about 60 times lower leakage current density for Y-doped ZrO2 compared to undoped ZrO2. It is notable that the dielectric properties and the leakage current density are simultaneously enhanced, indicating that Y-doped ZrO2 is a promising candidate to satisfy the requirements of future DRAM capacitors.

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