Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric

Jae Seung Lee, Woo Hee Kim, Il Kwon Oh, Min Kyu Kim, Gyeongho Lee, Chang Wan Lee, Jusang Park, Clement Lansalot-Matras, Wontae Noh, Hyungjun Kim

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 Å/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.

Original languageEnglish
Pages (from-to)16-21
Number of pages6
JournalApplied Surface Science
Volume297
DOIs
Publication statusPublished - 2014 Apr 1

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Yttrium
Atomic layer deposition
Gate dielectrics
Permittivity
Phase transitions
Doping (additives)
Oxygen vacancies
Leakage currents
Dielectric properties
Scalability
Evaporation
Thermodynamic stability
Current density
Annealing
Decomposition
Degradation
Defects
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Lee, Jae Seung ; Kim, Woo Hee ; Oh, Il Kwon ; Kim, Min Kyu ; Lee, Gyeongho ; Lee, Chang Wan ; Park, Jusang ; Lansalot-Matras, Clement ; Noh, Wontae ; Kim, Hyungjun. / Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric In: Applied Surface Science. 2014 ; Vol. 297. pp. 16-21.
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abstract = "We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 {\AA}/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol{\%}) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol{\%}. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.",
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Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric . / Lee, Jae Seung; Kim, Woo Hee; Oh, Il Kwon; Kim, Min Kyu; Lee, Gyeongho; Lee, Chang Wan; Park, Jusang; Lansalot-Matras, Clement; Noh, Wontae; Kim, Hyungjun.

In: Applied Surface Science, Vol. 297, 01.04.2014, p. 16-21.

Research output: Contribution to journalArticle

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T1 - Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric

AU - Lee, Jae Seung

AU - Kim, Woo Hee

AU - Oh, Il Kwon

AU - Kim, Min Kyu

AU - Lee, Gyeongho

AU - Lee, Chang Wan

AU - Park, Jusang

AU - Lansalot-Matras, Clement

AU - Noh, Wontae

AU - Kim, Hyungjun

PY - 2014/4/1

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N2 - We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 Å/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.

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