Atomic layer deposition of Y                         2                         O                         3                          and yttrium-doped HfO                         2                          using a newly synthesized Y(iPrCp)                         2                         (N-iPr-amd) precursor for a high permittivity gate dielectric

Jae Seung Lee; Woo Hee Kim; Il Kwon Oh; Min Kyu Kim; Gyeongho Lee; Chang Wan Lee; Jusang Park; Clement Lansalot-Matras; Wontae Noh; Hyungjun Kim

doi:10.1016/j.apsusc.2014.01.032

Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric

Jae Seung Lee, Woo Hee Kim, Il Kwon Oh, Min Kyu Kim, Gyeongho Lee, Chang Wan Lee, Jusang Park, Clement Lansalot-Matras, Wontae Noh, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

We systematically investigated the effects of Y doping in HfO ₂ dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y ₂ O ₃ films showed well-saturated and linear growth characteristics of ∼0.45 Å/cycle without significant incubation delays and produced pure Y ₂ O ₃ films. Then, yttrium-doped HfO ₂ films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y ₂ O ₃ and HfO ₂ growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO ₂ induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.

Original language	English
Pages (from-to)	16-21
Number of pages	6
Journal	Applied Surface Science
Volume	297
DOIs	https://doi.org/10.1016/j.apsusc.2014.01.032
Publication status	Published - 2014 Apr 1

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (1004192610041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductors and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea), and supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028594).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2014.01.032

Cite this

Lee, J. S., Kim, W. H., Oh, I. K., Kim, M. K., Lee, G., Lee, C. W., Park, J., Lansalot-Matras, C., Noh, W., & Kim, H. (2014). Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric Applied Surface Science, 297, 16-21. https://doi.org/10.1016/j.apsusc.2014.01.032

Lee, Jae Seung ; Kim, Woo Hee ; Oh, Il Kwon et al. / Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric In: Applied Surface Science. 2014 ; Vol. 297. pp. 16-21.

@article{8624f31303854774b18bc9aac5899c40,

title = " Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric ",

abstract = " We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 {\AA}/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.",

author = "Lee, {Jae Seung} and Kim, {Woo Hee} and Oh, {Il Kwon} and Kim, {Min Kyu} and Gyeongho Lee and Lee, {Chang Wan} and Jusang Park and Clement Lansalot-Matras and Wontae Noh and Hyungjun Kim",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (1004192610041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductors and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea), and supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028594). ",

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doi = "10.1016/j.apsusc.2014.01.032",

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Lee, JS, Kim, WH, Oh, IK, Kim, MK, Lee, G, Lee, CW, Park, J, Lansalot-Matras, C, Noh, W & Kim, H 2014, ' Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric ', Applied Surface Science, vol. 297, pp. 16-21. https://doi.org/10.1016/j.apsusc.2014.01.032

Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric . / Lee, Jae Seung; Kim, Woo Hee; Oh, Il Kwon et al.

In: Applied Surface Science, Vol. 297, 01.04.2014, p. 16-21.

Research output: Contribution to journal › Article › peer-review

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T1 - Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric

AU - Lee, Jae Seung

AU - Kim, Woo Hee

AU - Oh, Il Kwon

AU - Kim, Min Kyu

AU - Lee, Gyeongho

AU - Lee, Chang Wan

AU - Park, Jusang

AU - Lansalot-Matras, Clement

AU - Noh, Wontae

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (1004192610041926, Development of high density plasma technologies for thin film deposition of nanoscale semiconductors and flexible display processing) funded by the Ministry of Knowledge Economy (MKE, Korea), and supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028594).

PY - 2014/4/1

Y1 - 2014/4/1

N2 - We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 Å/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.

AB - We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectric properties of the resultant films. Y doping was carried out using atomic layer deposition (ALD) with a novel Y(iPrCp)2(N-iPr-amd) precursor, which exhibits good thermal stability without any decomposition and clean evaporation. As a result, the ALD process of the Y 2 O 3 films showed well-saturated and linear growth characteristics of ∼0.45 Å/cycle without significant incubation delays and produced pure Y 2 O 3 films. Then, yttrium-doped HfO 2 films with various Y/(Y + Hf) compositions (yttrium content: 0.6- 4.8 mol%) were prepared by alternating Y 2 O 3 and HfO 2 growth cycles. Structural and electrical characterization revealed that the addition of yttrium to HfO 2 induced phase transformations from the monoclinic to the cubic or tetragonal phases, even at low post-annealing temperatures of 600 C, and improved leakage current densities by inducing oxygen vacancy-related complex defects. A maximum relative dielectric constant of ∼33.4 was obtained for films with a yttrium content of ∼1.2 mol%. Excellent EOT scalability was observed down to ∼1 nm without dielectric constant degradation.

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Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW et al. Atomic layer deposition of Y ₂ O ₃ and yttrium-doped HfO ₂ using a newly synthesized Y(iPrCp) ₂ (N-iPr-amd) precursor for a high permittivity gate dielectric Applied Surface Science. 2014 Apr 1;297:16-21. doi: 10.1016/j.apsusc.2014.01.032