Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric

Jae Seung Lee, Woo Hee Kim, Il Kwon Oh, Min Kyu Kim, Gyeongho Lee, Chang Wan Lee, Jusang Park, Clement Lansalot-Matras, Wontae Noh, Hyungjun Kim

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