Abstract
ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.
| Original language | English |
|---|---|
| Article number | 142113 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2011 Apr 4 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties. / Kim, Jae Min; Nam, Taewook; Lim, S. J.; Seol, Y. G.; Lee, N. E.; Kim, Doyoung; Kim, Hyungjun.
In: Applied Physics Letters, Vol. 98, No. 14, 142113, 04.04.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties
AU - Kim, Jae Min
AU - Nam, Taewook
AU - Lim, S. J.
AU - Seol, Y. G.
AU - Lee, N. E.
AU - Kim, Doyoung
AU - Kim, Hyungjun
PY - 2011/4/4
Y1 - 2011/4/4
N2 - ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.
AB - ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.
UR - http://www.scopus.com/inward/record.url?scp=79954543702&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79954543702&partnerID=8YFLogxK
U2 - 10.1063/1.3577607
DO - 10.1063/1.3577607
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142113
ER -