Abstract
ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.
| Original language | English |
|---|---|
| Article number | 142113 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2011 Apr 4 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties'. Together they form a unique fingerprint.
Cite this
Kim, J. M., Nam, T., Lim, S. J., Seol, Y. G., Lee, N. E., Kim, D., & Kim, H. (2011). Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties. Applied Physics Letters, 98(14), [142113]. https://doi.org/10.1063/1.3577607