Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Jae Min Kim, Taewook Nam, S. J. Lim, Y. G. Seol, N. E. Lee, Doyoung Kim, Hyungjun Kim

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.

Original languageEnglish
Article number142113
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
Publication statusPublished - 2011 Apr 4

Fingerprint

atomic layer epitaxy
transistors
modulation
thin films
threshold voltage
polyethylenes
nanowires
field effect transistors
electrical properties
saturation
single crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Jae Min ; Nam, Taewook ; Lim, S. J. ; Seol, Y. G. ; Lee, N. E. ; Kim, Doyoung ; Kim, Hyungjun. / Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties. In: Applied Physics Letters. 2011 ; Vol. 98, No. 14.
@article{c9fe898ee58a44868838958442ca757a,
title = "Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties",
abstract = "ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.",
author = "Kim, {Jae Min} and Taewook Nam and Lim, {S. J.} and Seol, {Y. G.} and Lee, {N. E.} and Doyoung Kim and Hyungjun Kim",
year = "2011",
month = "4",
day = "4",
doi = "10.1063/1.3577607",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties. / Kim, Jae Min; Nam, Taewook; Lim, S. J.; Seol, Y. G.; Lee, N. E.; Kim, Doyoung; Kim, Hyungjun.

In: Applied Physics Letters, Vol. 98, No. 14, 142113, 04.04.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

AU - Kim, Jae Min

AU - Nam, Taewook

AU - Lim, S. J.

AU - Seol, Y. G.

AU - Lee, N. E.

AU - Kim, Doyoung

AU - Kim, Hyungjun

PY - 2011/4/4

Y1 - 2011/4/4

N2 - ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.

AB - ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.

UR - http://www.scopus.com/inward/record.url?scp=79954543702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79954543702&partnerID=8YFLogxK

U2 - 10.1063/1.3577607

DO - 10.1063/1.3577607

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142113

ER -