ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.
Bibliographical noteFunding Information:
This research was supported by Future-based Technology Development Program (Nano Fields) and Basic Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2010-0020230 and 2010-0024066).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)