Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Jae Min Kim; Taewook Nam; S. J. Lim; Y. G. Seol; N. E. Lee; Doyoung Kim; Hyungjun Kim

doi:10.1063/1.3577607

Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Jae Min Kim, Taewook Nam, S. J. Lim, Y. G. Seol, N. E. Lee, Doyoung Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.

Original language	English
Article number	142113
Journal	Applied Physics Letters
Volume	98
Issue number	14
DOIs	https://doi.org/10.1063/1.3577607
Publication status	Published - 2011 Apr 4

Bibliographical note

Funding Information:
This research was supported by Future-based Technology Development Program (Nano Fields) and Basic Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2010-0020230 and 2010-0024066).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.",

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AU - Kim, Jae Min

AU - Nam, Taewook

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AU - Seol, Y. G.

AU - Lee, N. E.

AU - Kim, Doyoung

AU - Kim, Hyungjun

N1 - Funding Information: This research was supported by Future-based Technology Development Program (Nano Fields) and Basic Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2010-0020230 and 2010-0024066).

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N2 - ZnO:N flexible thin film transistors were fabricated by atomic layer deposition on polyethylene naphthalate substrates and the effects of bending on the device properties investigated. The threshold voltage and saturation mobility were observed to change with respect to the amount of substrate bending. These modulations can be explained in terms of piezoelectric nature of in ZnO. In comparison with the previously reported single crystal nanowires ZnO field effect transistors, the amount of the electrical property modulation under bent condition is significantly reduced and our report shows a much improved stability for ZnO:N as a flexible device material.

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Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Abstract

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