Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Yi Rang Lim, Jin Kyu Han, Yeoheung Yoon, Jae Bok Lee, Cheolho Jeon, Min Choi, Hyunju Chang, Noejung Park, Jung Hwa Kim, Zonghoon Lee, Wooseok Song, Sung Myung, Sun Sook Lee, Ki Seok An, Jong Hyun Ahn, Jongsun Lim

Research output: Contribution to journalArticle

Abstract

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.

Original languageEnglish
Article number1901405
JournalAdvanced Materials
Volume31
Issue number29
DOIs
Publication statusPublished - 2019 Jul 19

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Industrial applications
Transition metals
Multilayers
Ternary alloys
Hydrogen
Substitution reactions
Transition metal alloys
Nanophotonics
Optoelectronic devices
Crystalline materials
Atoms
Crystals
Catalysts
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lim, Yi Rang ; Han, Jin Kyu ; Yoon, Yeoheung ; Lee, Jae Bok ; Jeon, Cheolho ; Choi, Min ; Chang, Hyunju ; Park, Noejung ; Kim, Jung Hwa ; Lee, Zonghoon ; Song, Wooseok ; Myung, Sung ; Lee, Sun Sook ; An, Ki Seok ; Ahn, Jong Hyun ; Lim, Jongsun. / Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. In: Advanced Materials. 2019 ; Vol. 31, No. 29.
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abstract = "Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.",
author = "Lim, {Yi Rang} and Han, {Jin Kyu} and Yeoheung Yoon and Lee, {Jae Bok} and Cheolho Jeon and Min Choi and Hyunju Chang and Noejung Park and Kim, {Jung Hwa} and Zonghoon Lee and Wooseok Song and Sung Myung and Lee, {Sun Sook} and An, {Ki Seok} and Ahn, {Jong Hyun} and Jongsun Lim",
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Lim, YR, Han, JK, Yoon, Y, Lee, JB, Jeon, C, Choi, M, Chang, H, Park, N, Kim, JH, Lee, Z, Song, W, Myung, S, Lee, SS, An, KS, Ahn, JH & Lim, J 2019, 'Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications', Advanced Materials, vol. 31, no. 29, 1901405. https://doi.org/10.1002/adma.201901405

Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. / Lim, Yi Rang; Han, Jin Kyu; Yoon, Yeoheung; Lee, Jae Bok; Jeon, Cheolho; Choi, Min; Chang, Hyunju; Park, Noejung; Kim, Jung Hwa; Lee, Zonghoon; Song, Wooseok; Myung, Sung; Lee, Sun Sook; An, Ki Seok; Ahn, Jong Hyun; Lim, Jongsun.

In: Advanced Materials, Vol. 31, No. 29, 1901405, 19.07.2019.

Research output: Contribution to journalArticle

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T1 - Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

AU - Lim, Yi Rang

AU - Han, Jin Kyu

AU - Yoon, Yeoheung

AU - Lee, Jae Bok

AU - Jeon, Cheolho

AU - Choi, Min

AU - Chang, Hyunju

AU - Park, Noejung

AU - Kim, Jung Hwa

AU - Lee, Zonghoon

AU - Song, Wooseok

AU - Myung, Sung

AU - Lee, Sun Sook

AU - An, Ki Seok

AU - Ahn, Jong Hyun

AU - Lim, Jongsun

PY - 2019/7/19

Y1 - 2019/7/19

N2 - Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.

AB - Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.

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