Nitrogen incorporation produces several benefits in the performance of high k gate oxides. However, since too much nitrogen incorporation at the interface of gate dielectric can result in device degradation, the atomic scale control of nitrogen depth profile is desirable. In this study, the authors have improved electrical properties and interface properties by depth profile control of in situ nitrogen incorporation during plasma enhanced atomic layer deposition. The best electrical properties in terms of hysteresis, equivalent oxide thickness, and interface states were obtained when the nitrogen is incorporated in the middle of the thin film, which has not been achievable by other techniques.
Bibliographical noteFunding Information:
The authors gratefully thank Hyoungsub Kim in Sungkyunkwan University for helpful discussions in electrical measurements. This work was supported by the Korea Research Foundation (Basic Research Promotion Fund, KRF-2006-311-D00114 and MOEHRD, KRF-2005-005-J13102) and POSTECH Core Research Program. One of the authors (W.J.M.) was financially supported by the second stage of the Brain Korea 21 project in 2007.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)