Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

W. S. Cho, J. Y. Kim, S. S. Kim, D. S. Choi, K. Jeong, I. W. Lyo, C. N. Whang, K. H. Chae

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

Original languageEnglish
Pages (from-to)L259-L266
JournalSurface Science
Volume476
Issue number3
DOIs
Publication statusPublished - 2001 Apr 1

Bibliographical note

Funding Information:
Authors thanks to T.N. Wittberg at University of Dayton for donation of Ba dispenser. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Atomic-scale Surface Science Research Center (ASSRC) at Yonsei University.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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