Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

W. S. Cho, J. Y. Kim, S. S. Kim, D. S. Choi, KwangHo Jeong, I. W. Lyo, C. N. Whang, K. H. Chae

Research output: Contribution to journalArticle

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Abstract

The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

Original languageEnglish
JournalSurface Science
Volume476
Issue number3
DOIs
Publication statusPublished - 2001 Apr 1

Fingerprint

ion scattering
atomic structure
Spectroscopy
Scattering
Ions
Adsorption
Atoms
Temperature
adatoms
energy
periodic variations
adsorption
collisions
room temperature
spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Cho, W. S. ; Kim, J. Y. ; Kim, S. S. ; Choi, D. S. ; Jeong, KwangHo ; Lyo, I. W. ; Whang, C. N. ; Chae, K. H. / Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering. In: Surface Science. 2001 ; Vol. 476, No. 3.
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Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering. / Cho, W. S.; Kim, J. Y.; Kim, S. S.; Choi, D. S.; Jeong, KwangHo; Lyo, I. W.; Whang, C. N.; Chae, K. H.

In: Surface Science, Vol. 476, No. 3, 01.04.2001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

AU - Cho, W. S.

AU - Kim, J. Y.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Jeong, KwangHo

AU - Lyo, I. W.

AU - Whang, C. N.

AU - Chae, K. H.

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AB - The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

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