Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

W. S. Cho, J. Y. Kim, S. S. Kim, D. S. Choi, K. Jeong, I. W. Lyo, C. N. Whang, K. H. Chae

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Abstract

The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

Original languageEnglish
Pages (from-to)L259-L266
JournalSurface Science
Volume476
Issue number3
DOIs
Publication statusPublished - 2001 Apr 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Cho, W. S., Kim, J. Y., Kim, S. S., Choi, D. S., Jeong, K., Lyo, I. W., Whang, C. N., & Chae, K. H. (2001). Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering. Surface Science, 476(3), L259-L266. https://doi.org/10.1016/S0039-6028(01)00762-2