Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

W. S. Cho, J. Y. Kim, N. G. Park, I. W. Lyo, K. Jeong, S. S. Kim, D. S. Choi, C. N. Whang, K. H. Chae

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Abstract

The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

Original languageEnglish
Pages (from-to)L309-L314
JournalSurface Science
Volume453
Issue number1-3
DOIs
Publication statusPublished - 2000 May 10

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Cho, W. S., Kim, J. Y., Park, N. G., Lyo, I. W., Jeong, K., Kim, S. S., Choi, D. S., Whang, C. N., & Chae, K. H. (2000). Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature. Surface Science, 453(1-3), L309-L314. https://doi.org/10.1016/S0039-6028(00)00344-7