Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

W. S. Cho, J. Y. Kim, N. G. Park, I. W. Lyo, KwangHo Jeong, S. S. Kim, D. S. Choi, C. N. Whang, K. H. Chae

Research output: Contribution to journalArticle

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Abstract

The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

Original languageEnglish
JournalSurface Science
Volume453
Issue number1-3
DOIs
Publication statusPublished - 2000 May 10

Fingerprint

atomic structure
Atoms
room temperature
atoms
ion scattering
Temperature
Spectroscopy
Scattering
Ions
Adsorption
adsorption
collisions
spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Cho, W. S. ; Kim, J. Y. ; Park, N. G. ; Lyo, I. W. ; Jeong, KwangHo ; Kim, S. S. ; Choi, D. S. ; Whang, C. N. ; Chae, K. H. / Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature. In: Surface Science. 2000 ; Vol. 453, No. 1-3.
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abstract = "The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 {\AA} and 3.47 {\AA} from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 {\AA} from the second layer of the Si(001) surface.",
author = "Cho, {W. S.} and Kim, {J. Y.} and Park, {N. G.} and Lyo, {I. W.} and KwangHo Jeong and Kim, {S. S.} and Choi, {D. S.} and Whang, {C. N.} and Chae, {K. H.}",
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Cho, WS, Kim, JY, Park, NG, Lyo, IW, Jeong, K, Kim, SS, Choi, DS, Whang, CN & Chae, KH 2000, 'Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature', Surface Science, vol. 453, no. 1-3. https://doi.org/10.1016/S0039-6028(00)00344-7

Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature. / Cho, W. S.; Kim, J. Y.; Park, N. G.; Lyo, I. W.; Jeong, KwangHo; Kim, S. S.; Choi, D. S.; Whang, C. N.; Chae, K. H.

In: Surface Science, Vol. 453, No. 1-3, 10.05.2000.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

AU - Cho, W. S.

AU - Kim, J. Y.

AU - Park, N. G.

AU - Lyo, I. W.

AU - Jeong, KwangHo

AU - Kim, S. S.

AU - Choi, D. S.

AU - Whang, C. N.

AU - Chae, K. H.

PY - 2000/5/10

Y1 - 2000/5/10

N2 - The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

AB - The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

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