The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.
Bibliographical noteFunding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation (Project No. 98-015-D00092) and the Korea Science and Engineering Foundation (Project No. 981-0209-038-2).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry