The microstructure of HfO2/SiO2/Si and HfAlO/SiO 2/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO2 film.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2004 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films