Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001)

Hyo Sik Chang, Hyunsang Hwang, Mann Ho Cho, Hyun Kyung Kim, Dae Won Moon

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The microstructure of HfO2/SiO2/Si and HfAlO/SiO 2/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO2 film.

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number1
Publication statusPublished - 2004 Jan

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Atomic transport and stability during annealing of HfO<sub>2</sub> and HfAlO with an ultrathin layer of SiO<sub>2</sub> on Si(001)'. Together they form a unique fingerprint.

Cite this