Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V−1 s−1 at carrier density of 4 × 1012 cm−2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.
Bibliographical noteFunding Information:
This research was primarily supported by the National Science Foundation MRSEC program under NSF Award Number DMR-1720633. Work at Yonsei was funded by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1502-12. Y.L. and P.Y.H. were supported by the Air Force Office of Scientific Research under award number FA9550-7-1-0213; R.G.M acknowledges funding by DOE Basic Energy Sciences under DESC0012649. This work was carried out in part in the Fredrick-Seitz Material Research Laboratory Central Facilities and the Micro and Nano Technology Laboratory at UIUC. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI Grant Numbers JP15K21722.
All Science Journal Classification (ASJC) codes
- Biochemistry, Genetics and Molecular Biology(all)
- Physics and Astronomy(all)