Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides

Yoon Seok Kim, Sojung Kang, Jae Pil So, Jong Chan Kim, Kangwon Kim, Seunghoon Yang, Yeonjoon Jung, Yongjun Shin, Seongwon Lee, Donghun Lee, Jin Woo Park, Hyeonsik Cheong, Hu Young Jeong, Hong Gyu Park, Gwan Hyoung Lee, Chul Ho Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic–layer–confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered heterostructures for 2D quantum optoelectronics.

Original languageEnglish
Article numbereabd7921
JournalScience Advances
Volume7
Issue number13
DOIs
Publication statusPublished - 2021 Mar

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