We study the transport properties of deeply scaled monolayer MoS 2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs), using full-band ballistic quantum transport simulations, with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, suppression of drain-induced barrier lowering, and gate-induced drain leakage. However, these full-band simulations exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2.
Bibliographical noteFunding Information:
The authors acknowledge support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN), Intel, and NSF NASCENT ERC.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)