Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

Jiwon Chang, Leonard F. Register, Sanjay K. Banerje

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages43-46
Number of pages4
ISBN (Electronic)9780615717562
Publication statusPublished - 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: 2012 Sep 52012 Sep 7

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period12/9/512/9/7

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support.

Publisher Copyright:
© 2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Fingerprint Dive into the research topics of 'Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs'. Together they form a unique fingerprint.

Cite this